Self-Referenced MRAM Element Parallel Field Line Branches
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Solution Overview
Problem
Conventional self-referenced MRAM devices require high field currents to generate sufficient magnetic fields for writing and reading, which is detrimental in low power applications and those with high surface density of MRAM elements, as they consume more power and are inefficient in generating magnetic fields with small field lines.
Innovation Solution
The MRAM element employs a field line with parallel branches and cladding to focus the magnetic field, allowing reduced field currents while maintaining or enhancing the magnetic field strength, thereby improving selectivity and efficiency in varying magnetoresistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If high field currents are used to generate sufficient magnetic fields for writing and reading MRAM cells, then the magnetic field strength is improved, but the power consumption increases and becomes detrimental in low power applications
Solution Approach 1:
The field line is divided into two parallel branches that are electrically connected in parallel. Each branch is arranged to pass a portion of the field current and generate a magnetic field component. The combined effect of both branches produces a stronger magnetic field than a single branch would generate with the same total current, thereby reducing the required field current and power consumption while maintaining sufficient magnetic field strength for MRAM cell writing and reading.
Solution Approach 2:
The patent combines the magnetic field generation from two parallel field line branches to achieve a stronger overall magnetic field. By merging the contributions from both branches, the system generates the required magnetic field strength with reduced current compared to a conventional single-branch field line, thus lowering power consumption in MRAM devices.
2Strength
If high field currents are used to generate sufficient magnetic fields, then the magnetic field strength is improved, but the efficiency of generating magnetic fields with small field lines deteriorates
Solution Approach 1:
The field line is segmented into two parallel branches, allowing each branch to be optimized for compact dimensions. The parallel configuration enables the magnetic fields from both branches to add constructively, achieving high magnetic field strength from small-sized field lines with improved efficiency, suitable for high surface density MRAM devices.
Solution Approach 2:
By merging the magnetic field contributions from two parallel branches in a compact configuration, the patent achieves efficient magnetic field generation in small field lines. This combined approach maximizes the magnetic field output relative to the physical size of the field line structure.
3Device complexity
If conventional field line configurations are used, then the device structure is simple, but the selectivity in varying magnetoresistance of specific MRAM cells deteriorates
Solution Approach 1:
The field line is segmented into two parallel branches with specific geometric arrangements relative to the MRAM cells. This segmentation enables selective addressing of MRAM cells by controlling which branch receives the field current, thereby improving selectivity in varying magnetoresistance of specific cells while maintaining a relatively simple overall structure.
Solution Approach 2:
The parallel branch configuration allows different regions of the field line structure to have different functions. Each branch can be positioned and dimensioned to optimally affect specific MRAM cells, providing local optimization of magnetic field distribution and improving selectivity without requiring complex control circuitry.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables the use of reduced field currents to generate stronger magnetic fields, enhancing the selectivity and efficiency of magnetoresistance variation in MRAM elements, particularly beneficial for low power applications and high-density MRAM devices.
Implementation Method 1
a field line (5) for passing a field current (51) and generating a magnetic field (52)
Implementation Method 2
a magnetic field (52) generated by a field current (51) passing in the field line (5) varies a magnetoresistance of the magnetic tunnel junction (2)
Data Source
Figure 1~2
Figure 3~4
Figure 5~6
AI summary
Self-reference-based MRAM element (1) comprising: a first magnetic tunnel junctions (2) and a second magnetic tunnel junctions (2'), each having a magnetoresistance that can be varied; and a field line (5) for passing a field current (51) destined to vary the magnetoresistance of the first and second magnetic tunnel junctions (2); the field line (5) comprising a first branch (5') and a second branch (5") both branch (5', 5") comprises a cladding (6); the first branch (5') being arranged for passing a first portion (51') of the field current to selectively vary the magnetoresistance of the first magnetic tunnel junction (2), and the second branch (5") being electrically connected in parallel with the first branch (5') and arranged for passing a second portion (51") of the field current to selectively vary the magnetoresistance of the second magnetic tunnel junction (2'). The present disclosure also concerns a MRAM device comprising a plurality of the MRAM elements. The self-referenced MRAM element and MRAM device can use a reduced field current.