MRAM Magnetic Shielding for Stray Field Diversion
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Solution Overview
Problem
Magnetoresistive random access memory (MRAM) is susceptible to data corruption and erasure due to stray magnetic fields, which can change the polarity of memory cells and erase stored data.
Innovation Solution
The implementation of a microelectronic component with magnetic shields made from ferromagnetic materials, such as iron-cobalt alloys, positioned above and below the MRAM circuitry to divert stray magnetic fields, ensuring a high magnetic shielding efficiency of at least 90% to 98%, and the use of electromagnetic coils to neutralize sensed magnetic fields.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If magnetic shields are added to protect MRAM circuitry from stray magnetic fields, then data integrity is improved, but device complexity increases
Solution Approach 1:
The magnetic shielding is divided into multiple segments: top shields, bottom shields, and side shields that can be selectively applied depending on the specific application requirements. This segmentation allows the system to achieve necessary protection while avoiding the complexity of implementing a complete enclosure in all cases.
Solution Approach 2:
Magnetic shielding is applied locally at critical areas where MRAM circuitry is most vulnerable to stray magnetic fields, rather than uniformly across the entire device. This targeted approach provides effective protection while minimizing the added complexity and material requirements.
2Reliability
If magnetic shields are positioned close to MRAM circuitry for effective shielding, then shielding efficiency is improved, but manufacturing precision requirements increase
Solution Approach 1:
The magnetic shields are designed to be positioned and secured to the substrate before the MRAM circuitry is fully assembled. This preliminary positioning allows for easier alignment and reduces the precision requirements during final assembly, as the shields are already in place to guide subsequent components.
Solution Approach 2:
Mounting structures and alignment features serve as intermediaries between the magnetic shields and the substrate, providing mechanical support and precise positioning without requiring direct high-precision bonding between all components. These intermediaries absorb some of the positioning tolerances.
3Reliability
If ferromagnetic materials are used for magnetic shields, then magnetic field diversion is improved, but susceptibility to magnetic field corruption increases
Solution Approach 1:
The magnetic shields utilize composite material structures that combine ferromagnetic materials for field diversion with non-magnetic or magnetically resistant materials for structural support and protection. This composite approach allows the shield to effectively divert stray magnetic fields while the non-magnetic components remain unaffected by magnetic field corruption.
Solution Approach 2:
Non-magnetic intermediary materials are positioned between the ferromagnetic shield components and the external environment, acting as a barrier that prevents magnetic field corruption from reaching critical areas while allowing the ferromagnetic materials to perform their field diversion function.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Effectively protects MRAM circuitry from stray magnetic fields, ensuring data integrity by diverting or neutralizing external magnetic interference, thereby maintaining data accuracy and preventing corruption.
Implementation Method 1
The magnetic shield can be mounted to the first face of the die and be adapted to divert stray magnetic field away from the MRAM circuitry
Implementation Method 2
the use of electromagnetic coils to neutralize sensed magnetic fields
Data Source
AI summary
Various structures chip packages are disclosed including a magnetoresistive random access memory (“MRAM”) device and a magnetic shield structure. The magnetic shield structure may be made from material having either ferromagnetic or diamagnetic material and may be shaped and incorporated into the chip package to divert stray magnetic fields away from the MRAM device.