MRAM Magnetic Shielding Integration for Field Interference
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor devices, particularly MRAM devices, are vulnerable to external magnetic field interference, leading to programming errors and unintended switching due to inadequate shielding, which existing solutions are costly and difficult to integrate.
Innovation Solution
A magnetically shielded semiconductor device is fabricated with top, bottom, and sidewall magnetic shields, using nickel-iron alloys or composite materials, to provide comprehensive magnetic shielding around the MRAM die, ensuring protection from external magnetic fields.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If conventional magnetic shielding solutions are used, then magnetic field interference is reduced, but cost and integration difficulty increase
Solution Approach 1:
The patent merges the magnetic shielding function with the MRAM device structure itself by depositing magnetic shielding layers directly on the substrate and interconnects during the fabrication process. This integration eliminates the need for separate shielding components and reduces manufacturing complexity while providing effective magnetic field protection to the magnetic tunnel junctions.
Solution Approach 2:
The magnetic shielding is segmented into multiple layers deposited at different stages of fabrication. A first magnetic shielding layer is deposited before forming the magnetic tunnel junctions, and a second magnetic shielding layer is deposited after forming the interconnects. This segmented approach allows targeted shielding of different components without requiring complete redesign of the device architecture.
2Reliability
If external magnetic fields are blocked, then programming errors are reduced, but device complexity increases
Solution Approach 1:
The magnetic shielding layers serve multiple functions: they protect the magnetic tunnel junctions from external magnetic field interference during programming and reading operations, and they are integrated with the existing device layers to provide structural support. This multi-functionality reduces the need for additional protective structures and maintains device simplicity while improving programming accuracy.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces magnetic field interference, enhancing the stability and reliability of MRAM devices by providing comprehensive shielding that is cost-effective and compatible with existing fabrication processes.
Implementation Method 1
A magnetically shielded semiconductor device includes a cup-shaped magnetic shield defining a hollow. The magnetically shielded semiconductor device further includes a magnetoresistive random access memory (MRAM) die located at least partially within the hollow of the cup-shaped magnetic shield.
Data Source
AI summary
Shielded semiconductor devices and methods for fabricating shielded semiconductor devices are provided. An exemplary magnetically shielded semiconductor device includes a substrate having a top surface and a bottom surface. An electromagnetic-field-susceptible semiconductor component is located on and/or in the substrate. The magnetically shielded semiconductor device includes a top magnetic shield located over the top surface of the substrate. Further, the magnetically shielded semiconductor device includes a bottom magnetic shield located under the bottom surface of the substrate. Also, the magnetically shielded semiconductor device includes a sidewall magnetic shield located between the top magnetic shield and the bottom magnetic shield.