MRAM Memory Elements Combining NVM and SRAM Performance

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Solution Overview

Problem

Existing memory technologies, such as Non-Volatile Memory (NVM) and Static Random Access Memory (SRAM), have distinct performance requirements that are not effectively met by a single memory solution, limiting their replacement by Magnetic Random Access Memory (MRAM) due to differences in retention, speed, and endurance.

Innovation Solution

A method for manufacturing a magnetic data chip with MRAM elements having different performance characteristics by depositing two types of magnetic memory materials on a substrate and patterning them using a common process to create distinct areas with performance characteristics that meet or exceed those of NVM and SRAM, respectively.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If a single type of MRAM element is used, then the device complexity is reduced, but the ability to meet diverse performance requirements (retention, speed, endurance) deteriorates

Engineering Contradiction:

Improveperformance characteristicsVSAvoiddevice complexity

Core Design Contradiction:

Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The memory chip is divided into multiple regions, each containing MRAM elements with different performance characteristics. The fabrication process is segmented into separate deposition steps for different magnetic material compositions, allowing each region to be optimized for specific performance requirements while sharing common substrate and basic structure

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

Different regions of the memory chip are assigned different magnetic material compositions and structural parameters to achieve locally optimized performance characteristics. Some regions use materials optimized for high retention (NVM-class), while others use materials optimized for high speed (SRAM-class), allowing each local area to meet its specific performance targets

Inventive Principle:

Principle #3Local quality

2Reliability

If different magnetic material compositions are deposited, then the performance characteristics diverge to meet NVM and SRAM requirements, but the manufacturing process complexity increases

Engineering Contradiction:

Improveperformance characteristicsVSAvoidease of manufacture

Core Design Contradiction:

ReliabilityVSEase of manufacture

Solution Approach 1:

The deposition process is segmented into separate steps for different magnetic material compositions. Each material layer is deposited with specific composition parameters optimized for its intended performance class, allowing precise control over the magnetic properties of different regions while maintaining a systematic manufacturing approach

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The magnetic material composition parameters (such as thickness, material ratios, and deposition conditions) are changed between different deposition steps to achieve the desired performance characteristics. By controlling these parameters during fabrication, the patent achieves divergent performance outcomes from a unified manufacturing process

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables the creation of a single memory chip with MRAM elements that can replace both NVM and SRAM, offering improved retention, speed, and endurance, addressing the unique performance metrics of each type.

Implementation Method 1

depositing two types of magnetic memory materials on a substrate

Methodology Applied

Scientific EffectPhysical Vapour Deposition: Physical Vapour Deposition

Implementation Method 2

Magnetic Random Access Memory (MRAM) is a non-volatile data memory technology that stores data using magnetoresistive cells such as Magnetoresistive Tunnel Junction (MTJ) cells

Methodology Applied

Scientific EffectMagnetoresistance: Magnetoresistance

Implementation Method 3

The switching of the MTJ element between high and low resistance states results from electron spin transfer

Methodology Applied

Scientific EffectElectron spin transfer:

Implementation Method 4

The first magnetic layer, which can be referred to as a reference layer, has a magnetization that is fixed in a direction that is perpendicular to that plane of the layer

Methodology Applied

Scientific EffectMagnetism: Magnetism

Data Source

PatentUS10211395B1Method for combining NVM class and SRAM class MRAM elements on the same chip

Publication Date: 2019.02.19 INTEGRATED SILICON SOLUTION CAYMAN INC

AI summary

A method for manufacturing a magnetic random access memory chip having magnetic memory elements with different performance characteristics formed on the same chip. The magnetic memory elements can be magnetic random access memory elements. The memory chip can have a first set of magnetic random access chips having a first set of physical and performance characteristics formed in a first area of the sensor and a second set of magnetic random access chips having a second set of performance characteristics formed in a second area of the chip. For example, the first set of magnetic random access memory elements can have performance characteristics that match or exceed those of a non-volatile memory, whereas the second set of magnetic random access memory elements can have performance characteristic that match or exceed those of a static random access memory element.