MRAM Structure with Shared SOT Lines for Simultaneous Access
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Solution Overview
Problem
Existing MRAM technologies face challenges in efficiently connecting multiple memory units simultaneously while maintaining high performance and low power consumption, particularly in spin orbit torque (SOT) MRAM structures.
Innovation Solution
An MRAM structure is designed with a conductive line and SOT metal conductive line that electrically connects multiple memory units, utilizing switch elements to control current flow for simultaneous writing and reading operations, and a fabricating method that includes stacking and etching layers to form memory units and conductive lines.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If multiple memory units are connected using conventional methods, then connectivity is achieved, but power consumption increases and simultaneous operation capability is reduced
Solution Approach 1:
The patent segments the memory system into multiple independently addressable memory units (first memory unit, second memory unit, etc.), each with its own MTJ and switch element configuration. This segmentation allows selective activation of individual units or groups, enabling simultaneous operations on multiple units while maintaining low power consumption by only activating necessary units.
Solution Approach 2:
The patent introduces a new dimensional approach by adding a SOT metal conductive line that runs perpendicular to the conventional current flow path, allowing spin-orbit torque to be applied independently. This dimensional change enables non-destructive read operations and selective write operations to multiple memory units simultaneously through the conductive line, resolving the trade-off between power consumption and simultaneous operation capability.
2Productivity
If SOT metal conductive line is used to connect multiple memory units, then simultaneous writing and reading is enabled, but device complexity increases
Solution Approach 1:
The SOT metal conductive line serves multiple functions simultaneously: it acts as a current path for spin-orbit torque write operations, provides a reference path for read operations, and enables selective activation of memory units through switch element control. This multi-functionality reduces the need for separate dedicated lines for each operation type, thereby managing device complexity while enabling simultaneous writing and reading.
Solution Approach 2:
Switch elements are introduced as intermediary components between the SOT metal conductive line and memory units, providing controlled access and selection. These intermediaries manage the complexity by offering a standardized interface layer that simplifies the control logic for simultaneous operations on multiple memory units without requiring direct complex interconnections between all components.
3Quantity of substance
If conventional connection methods are used, then device simplicity is maintained, but density and performance are limited
Solution Approach 1:
The patent merges the write current path and read current path into a unified structure where the SOT metal conductive line serves both purposes. By combining these functions into a single integrated architecture rather than using separate conventional connection methods, the patent achieves higher memory density while managing connection structure complexity through shared infrastructure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables efficient, simultaneous writing and reading of multiple memory units with reduced power consumption and high density, leveraging SOT write operations for flexible programming.
Implementation Method 1
Another type of MRAM is spin orbit torque (SOT) MRAM, which uses current to change the spin direction of electrons in the free layer to change the direction of the magnetic moment, thereby to write or erase the SOT MRAM.
Data Source
AI summary
An MRAM structure includes a first memory unit and a second memory unit. A conductive line is disposed between the first memory unit and the second memory unit. An SOT metal conductive line contacts and electrically connects an end of the first memory unit, an end of the conductive line and an end of the second memory unit. A first switch element is electrically connected to an end of the SOT metal conductive line, and a second switch element is electrically connected to the other end of the SOT metal conductive line. A third switch element is electrically connected to the other end of the first memory unit. A fourth switch element is electrically connected to the other end of the conductive line. A fifth switch element is electrically connected to the other end of the second memory unit.