MRAM Magnetic Shield Layer Closed Path Design
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Solution Overview
Problem
Magnetic random access memory (MRAM) chips are susceptible to external magnetic fields, which can interfere with their operations such as writing, reading, and data storage, necessitating a solution to block these fields effectively.
Innovation Solution
A semiconductor device with a magnetic shield layer having a closed magnetic path surrounding the memory cell array area of the MRAM chip, utilizing materials like Ni, Fe, Co, and their alloys, to prevent external magnetic fields from entering and influencing the magnetoresistive elements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a magnetic shield layer is added to block external magnetic fields, then the reliability of the MRAM chip is improved, but the device complexity increases
Solution Approach 1:
The magnetic shield layer is divided into multiple segments: a first magnetic shield layer positioned at a first position and a second magnetic shield layer positioned at a second position. This segmentation allows the shield to block external magnetic fields from different directions while maintaining a simpler overall structure compared to a single comprehensive shield.
Solution Approach 2:
Magnetic shield layers are strategically positioned at specific locations where external magnetic field interference is most likely to occur. The first magnetic shield layer is placed at a first position and the second magnetic shield layer at a second position, providing localized protection where it is most needed rather than uniform shielding throughout the entire device.
2Object-affected harmful factors
If magnetic shield layers are positioned close to the MRAM chip to maximize shielding effect, then the blocking capability is improved, but the area occupied by the shield structure increases
Solution Approach 1:
The magnetic shielding function is divided into multiple discrete layers positioned at different locations. This segmentation allows for more efficient use of space compared to a single large shield, as each layer can be optimized for its specific position and function.
Solution Approach 2:
The magnetic shield layers are arranged in different spatial positions (first position and second position) rather than expanding in a single plane. This multi-dimensional arrangement provides effective magnetic field blocking while minimizing the overall area occupied by the shield structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The magnetic shield layer effectively stabilizes the operations of the MRAM chip by blocking external magnetic fields, ensuring accurate data writing, reading, and storage without interference.
Implementation Method 1
a magnetic shield layer separated from the MRAM chip, surrounding the memory cell array area in a circumferential direction of the MRAM chip, and having a closed magnetic path
Data Source
AI summary
According to one embodiment, a semiconductor device includes a MRAM chip including a semiconductor substrate and a memory cell array area includes magnetoresistive elements which are provided on the semiconductor substrate, and a magnetic shield layer separated from the MRAM chip, surrounding the memory cell array area in a circumferential direction of the MRAM chip, and having a closed magnetic path.