MRAM Underlying Layer Oxidation for Low Write Current
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Solution Overview
Problem
Miniaturization of magnetoresistive random access memory (MRAM) devices is hindered by increased coercivity of magnetic storage layers, leading to higher write currents, while spin-injection writing schemes face challenges in achieving both miniaturization and low current requirements.
Innovation Solution
The implementation of a magnetic memory structure with a substrate and underlying layers, including a first and second underlying layer with a metal composition, where the second underlying layer is formed through oxidation or nitriding treatment, and a magnetoresistive element comprising a first magnetic layer, tunnel barrier layer, and second magnetic layer, which reduces resistance and etching residue, facilitating miniaturization and low current operation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If the element size is reduced, then the integration density is improved, but the coercivity of the magnetic body increases and write current increases
Solution Approach 1:
The patent introduces a spin injection layer as an intermediary component that enables spin angular momentum transfer to reverse the magnetization of the storage layer. This mediator allows write operation without requiring high current through the magnetoresistive element itself, thus resolving the contradiction between miniaturization and write current reduction
Solution Approach 2:
The patent replaces the magnetic field writing scheme (which relies on current through write lines) with a spin-injection writing scheme that uses spin angular momentum transfer. This substitution enables more efficient magnetization reversal with lower current, addressing the issue where reduced element size leads to increased coercivity and write current requirements
2Volume of moving object
If the volume of the magnetic layer is reduced, then the spin-polarized electrons required are reduced, but achieving both miniaturization and low current remains challenging
Solution Approach 1:
The patent modifies the magnetization direction parameter of the storage layer by using spin angular momentum transfer from the spin injection layer. By changing the magnetization state through spin injection rather than traditional magnetic field methods, the system achieves reliable write operation in miniaturized structures where conventional methods would require excessive current
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables efficient miniaturization of MRAM devices with reduced write currents and improved reliability by minimizing etching residue and resistance, thereby achieving both miniaturization and low current consumption.
Implementation Method 1
applying oxidation treatment or nitriding treatment to the first underlying layer
Implementation Method 2
applying oxidation treatment or nitriding treatment to the first underlying layer
Implementation Method 3
The resistance of the MTJ element varies with the magnetization directions of the storage layer and the reference layer
Implementation Method 4
the magnetization direction of the storage layer is reversed by passing a spin-polarized current through the MTJ element itself
Data Source
AI summary
According to one embodiment, a magnetic memory is disclosed. The magnetic memory includes a substrate and an underlying layer provided on the substrate. The underlying layer includes a first underlying layer and a second underlying layer surrounding the first underlying layer. The first and second underlying layers contain a metal of a same type. The first underlying layer includes a lower part which is greater than the upper part in width. The magnetic memory further includes a magnetoresistive element provided on the underlying layer.