Feed Forward Bias Circuit for MTJ Memory Power Reduction
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Solution Overview
Problem
Existing bias voltage generation circuits for magnetic memory devices are inefficient due to large component count and high quiescent current draw, which increases power consumption and die area usage.
Innovation Solution
The implementation of feed-forward and feedback bias voltage generation circuits that use replica components to mimic the characteristics of magnetic tunnel junctions and selection circuits, allowing for efficient generation of bias voltages for read and write operations, with optional inclusion of capacitors or sample and hold circuits to conserve power.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by stationary object
If traditional bias voltage generation circuits are used, then bias voltage can be generated for magnetic memory operations, but power consumption increases due to high quiescent current draw
Solution Approach 1:
The patent implements a periodic refresh mechanism where the bias voltage is generated in bursts rather than continuously. A capacitor stores the bias voltage and refreshes it periodically, converting continuous power consumption into periodic action, thereby reducing quiescent current draw while maintaining voltage availability when needed
Solution Approach 2:
The bias voltage is generated in advance and stored in a capacitor before actual memory operations occur. This preliminary generation allows the high-current generation phase to be separated from the low-current storage phase, reducing overall power consumption while ensuring voltage readiness
2Area of stationary object
If traditional bias voltage generation circuits are used, then bias voltage can be generated, but die area increases due to large component count
Solution Approach 1:
The patent combines multiple functions into a single integrated circuit block that generates bias voltage for both read and write operations. By merging the voltage generation, storage, and refresh functions into one compact unit, the overall component count and die area are reduced while maintaining full functionality
Solution Approach 2:
The bias voltage generation circuit is designed to serve multiple purposes: generating voltage for read operations, write operations, and maintaining voltage across varying conditions. This multi-functional design eliminates the need for separate circuits for different operations, reducing overall circuit complexity and die area
Data Source
AI summary
The present disclosure is drawn to, among other things, a magnetic memory. The magnetic memory comprises a first common line, a second common line, and a memory cell. The magnetic memory further includes a bias voltage generation circuit and a voltage driver. The bias voltage generation circuit and the voltage driver are configured to provide driving voltages to the memory cell during access operations.