Magnetic Tunnel Junction Boron Absorption Layer
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Solution Overview
Problem
Current magnetic memory devices face challenges in achieving improved electromagnetic characteristics, particularly in terms of high-speed operation and low power consumption, which are essential for modern electronic products.
Innovation Solution
A method of manufacturing magnetic memory devices involves forming a boron-absorption layer covering magnetic tunnel junction patterns and performing a heat treatment process in specific gas atmospheres, such as hydrogen and oxygen, to diffuse boron out of the magnetic layers, crystallize them, and convert the boron-absorption layer into an insulating layer, thereby enhancing electromagnetic properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If a magnetic tunnel junction structure is formed with CoFeB magnetic layers, then high-speed operation and low power consumption are achieved, but electromagnetic characteristics and tunneling magnetoresistance are insufficient
Solution Approach 1:
A boron-absorption layer (Hf, Zr, Ti, Ta, W, or Mo) is introduced as an intermediary between the magnetic tunnel junction and the surrounding environment. This layer selectively absorbs boron atoms during heat treatment, preventing boron diffusion that would degrade electromagnetic characteristics while maintaining the low power consumption benefits of the CoFeB structure.
Solution Approach 2:
The patent applies heat treatment at controlled temperatures (200-400°C) in specific gas atmospheres (H2, O2, N2) to change the physical and chemical parameters of the magnetic layers. This heat treatment process optimizes the crystalline structure and magnetic properties, improving tunneling magnetoresistance and electromagnetic characteristics while preserving the low power consumption advantage.
2Reliability
If heat treatment is applied to crystallize magnetic layers, then electromagnetic characteristics improve, but boron diffusion may occur degrading device performance
Solution Approach 1:
The boron-absorption layer serves as a mediator that captures boron atoms during heat treatment. By placing this layer adjacent to the magnetic layers, it acts as a boron sink, preventing boron from diffusing into surrounding structures while allowing the heat treatment to proceed and crystallize the magnetic layers for improved electromagnetic characteristics.
Solution Approach 2:
The patent converts the potentially harmful effect of boron diffusion into a beneficial process. By intentionally introducing a boron-absorption layer, the boron that would otherwise diffuse and degrade performance is instead directed to absorb into the designated layer, simultaneously achieving crystallization of magnetic layers and preventing performance degradation.
3Reliability
If boron content in CoFeB layers is increased to improve magnetoresistance, then tunneling magnetoresistance increases, but electromagnetic characteristics and device stability deteriorate
Solution Approach 1:
The boron-absorption layer acts as a mediator that allows the magnetic layers to contain sufficient boron for high tunneling magnetoresistance while preventing excessive boron diffusion that would degrade device stability. The absorption layer captures excess boron, maintaining an optimal balance for device performance.
Solution Approach 2:
Through controlled heat treatment in specific gas atmospheres, the patent optimizes the boron distribution and crystalline structure of the CoFeB layers. This parameter control allows achieving high tunneling magnetoresistance through optimized boron content while maintaining device stability through controlled crystallization and prevented excessive diffusion.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the electromagnetic characteristics of magnetic memory devices, leading to reduced resistance area and increased tunneling magnetoresistance, which supports high-speed operation and low power consumption.
Implementation Method 1
performing a heat treatment process so that boron included in the upper and lower magnetic layers may be absorbed by the boron-absorption layer
Implementation Method 2
a boron-absorption layer may be formed covering the magnetic tunnel junction pattern, and a heat treatment process may be performed so that boron included in the upper and lower magnetic layers may be absorbed by the boron-absorption layer
Implementation Method 3
a heat treatment process may be performed so that boron included in the upper and lower magnetic layers may be absorbed by the boron-absorption layer
Implementation Method 4
through the heat treatment process, boron in the upper and lower magnetic layers may be diffused out, and the upper and lower magnetic layers may be crystallized in a desired crystalline orientation
Implementation Method 5
a magnetoresistive random access memory (MRAM) device, a memory device storing data using a resistance change phenomenon at a magnetic tunnel junction (MTJ)
Data Source
AI summary
A method of manufacturing a magnetic memory device may include forming a lower magnetic layer, a tunnel barrier layer, and an upper magnetic layer on a substrate, forming a magnetic tunnel junction pattern by etching a stacked structure including the lower magnetic layer, the tunnel barrier layer, and the upper magnetic layer, forming a boron-absorption layer covering the magnetic tunnel junction pattern, and performing a heat treatment process so that boron included in the upper and lower magnetic layers may be absorbed by the boron-absorption layer. The heat treatment process may be undertaken in a gaseous atmosphere including at least one of hydrogen, oxygen, and nitrogen.