Semiconductor Contact Plug Insulation for Magnetic Tunnel Junction Short Prevention

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Solution Overview

Problem

Magnetic tunnel junction patterns in semiconductor devices are prone to electrical shorts due to the re-deposition of conductive materials during the fabrication process, which affects the device's performance and reliability.

Innovation Solution

Incorporating an insulation pattern that covers the upper sidewall of the contact plug, isolating the barrier metal and preventing the re-deposition of conductive materials, thereby mitigating electrical shorts and enhancing the device's operating performance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a magnetic tunnel junction pattern is formed without additional insulation structures, then the fabrication process is simpler, but electrical shorts occur due to re-deposition of conductive materials

Engineering Contradiction:

Improveelectrical short preventionVSAvoidstructure complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The contact hole structure is segmented into multiple zones with different insulation arrangements: the lower portion has barrier metal insulation on sidewalls, while the upper portion has additional insulation patterns. This segmentation allows targeted insulation where re-deposition occurs without insulating the entire structure, balancing reliability and complexity.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

Insulation patterns are formed in advance before the magnetic tunnel junction pattern fabrication. The upper portion of the contact hole is pre-insulated with dielectric material and patterned structures, creating a protective barrier that prevents conductive material re-deposition during subsequent fabrication steps.

Inventive Principle:

Principle #10Preliminary action

2Reliability

If the contact hole is fully insulated, then electrical short prevention is improved, but signal transfer performance deteriorates due to increased electrical resistance

Engineering Contradiction:

Improveelectrical short preventionVSAvoidelectrical resistance control

Core Design Contradiction:

ReliabilityVSManufacturing precision

Solution Approach 1:

Different regions of the contact hole have different insulation properties: the lower portion has barrier metal insulation, the upper portion has dielectric insulation patterns, and the center pathway remains conductive. This local differentiation ensures insulation where needed while maintaining low resistance signal pathways.

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The insulation patterns act as intermediaries that selectively block re-deposited conductive materials from reaching the barrier metal, while allowing signal transmission through the contact plug. The insulating layer prevents harmful electrical shorts without completely blocking the electrical pathway.

Inventive Principle:

Principle #24Intermediary (Mediator)

Data Source

PatentUS10283698B2Semiconductor devices and methods of fabricating the same

Publication Date: 2019.05.07 SAMSUNG ELECTRONICS CO LTD

AI summary

A device, which may include a semiconductor device, may include a contact plug, a first barrier metal covering a bottom surface of the contact plug and a lower sidewall of the contact plug, such that the first barrier metal exposes an upper sidewall of the contact plug, and an insulation pattern covering the upper sidewall of the contact plug such that the insulation pattern isolates the first barrier metal from exposure. A magnetic tunnel junction pattern may cover a top surface of the contact plug. Each element of the contact plug, the first barrier metal, and the insulation pattern may be in a contact hole of a first interlayer dielectric layer.