Magnetic Tunnel Junction Seed Layer Holmium Crystallinity

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Integrated circuits with magnetic tunnel junctions (MTJs) face challenges in thermal stability and crystalline structure robustness due to excessive seed layer thickness and the need for thermal robustness during manufacturing processes.

Innovation Solution

Incorporating a seed layer with holmium, which is annealed to produce face-centered cubic crystals, enhancing the crystalline properties of the fixed layer and improving thermal stability and magnetic anisotropy in the MTJ stack.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Stability of the object's composition

If a traditional seed layer is used to induce crystallinity in the pinned layer, then the desired crystalline structure is achieved, but the seed layer requires excessive thickness which increases the aspect ratio and reduces structural stability

Engineering Contradiction:
Improvecrystalline structureVSAvoidseed layer thickness
Core Design Contradiction:
Stability of the object's compositionVSLength of stationary object

Solution Approach 1:

The patent changes the material composition parameter of the seed layer by incorporating holmium (Ho) at specific concentrations (e.g., 5-20 atomic percent mixed with tantalum, or as pure holmium layer). This material parameter change enables the seed layer to induce the desired body-centered cubic (BCC) crystalline structure in the pinned layer while maintaining a reduced thickness of approximately 5-15 nanometers, thereby resolving the contradiction between achieving crystallinity and minimizing thickness.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent employs composite seed layer structures, such as alternating layers of holmium and tantalum (e.g., five 1nm Ho layers and five 2nm Ta layers), or combinations of holmium with other materials like tungsten or molybdenum. These composite structures leverage the synergistic effects of different materials to achieve both the necessary crystalline induction capability and reduced thickness, thus resolving the technical contradiction.

Inventive Principle:
Principle #40Composite materials

2Length of stationary object

If the seed layer thickness is reduced to improve structural stability, then the aspect ratio improves, but the ability to support desired crystallinity may be compromised

Engineering Contradiction:
Improveseed layer thicknessVSAvoidcrystalline structure
Core Design Contradiction:
Length of stationary objectVSStability of the object's composition

Solution Approach 1:

By changing the material composition to include holmium, the seed layer achieves enhanced crystalline induction efficiency per unit thickness. Holmium's specific magnetic and crystalline properties enable it to effectively nucleate and maintain the desired BCC structure in the pinned layer even at reduced thicknesses of 5-15nm, thus resolving the contradiction between thickness reduction and crystalline structure support.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent applies local quality enhancement by concentrating the crystalline induction capability in the holmium-containing seed layer region. The holmium atoms locally provide the necessary structural template and magnetic properties to induce crystallinity in the overlying pinned layer, allowing the seed layer to be thin while still performing its critical function of crystalline structure support.

Inventive Principle:
Principle #3Local quality

3Stability of the object's composition

If a seed layer is used to induce crystallinity, then the magnetic properties are improved, but the seed layer must withstand annealing and solder reflow processes which challenges thermal robustness

Engineering Contradiction:
Improvemagnetic propertiesVSAvoidthermal robustness
Core Design Contradiction:
Stability of the object's compositionVSReliability

Solution Approach 1:

The patent uses composite seed layer structures combining holmium with thermally robust materials like tantalum, tungsten, or molybdenum. These composite structures maintain the crystalline induction capability of holmium while the accompanying materials provide thermal stability and resistance to annealing and solder reflow processes, thus resolving the contradiction between magnetic property improvement and thermal robustness.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

By selecting specific holmium concentrations and combining with materials having high melting points and thermal stability, the seed layer's thermal resistance parameter is enhanced. The composite structure maintains magnetic and crystalline properties through thermal processing, achieving both improved magnetic properties and thermal robustness required for manufacturing processes.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The use of a holmium seed layer increases the thermal stability and robustness of the MTJ stack, allowing it to withstand higher temperatures and manufacturing processes like annealing, thereby improving the reliability of memory storage.

Implementation Method 1

The seed layer is annealed to produce face centered cubic crystals within the seed layer

Methodology Applied
Scientific EffectAnnealing: Annealing

Implementation Method 2

annealed to produce face centered cubic crystals within the seed layer

Methodology Applied
Scientific EffectCrystallization: Crystallisation

Implementation Method 3

The first and second pinned layers are magnetically coupled to produce a more robust overall fixed layer

Methodology Applied
Scientific EffectMagnetic coupling: Magnetism

Implementation Method 4

If the fixed layer and the free layer have parallel magnetic poles, the resistance through the MTJ stack is measurably less than if the fixed layer and the free layer have anti-parallel poles

Methodology Applied
Scientific EffectMagnetoresistance: Magnetoresistance

Data Source

PatentUS10468171B1Integrated circuits with magnetic tunnel junctions and methods of producing the same
Publication Date: 2019.11.05 GLOBALFOUNDRIES SINGAPORE PTE LTD
  • US10468171B1 patent drawing
  • US10468171B1 patent drawing

AI summary

Integrated circuits and methods of producing the same are provided. In an exemplary embodiment, an integrated circuit includes a magnetic tunnel junction stack. The magnetic tunnel junction stack includes a seed layer, first and second pinned layers, and a coupling layer. The seed layer includes holmium. The first pinned layer overlies the seed layer, where the first pinned layer is magnetic, and the non-magnetic coupling layer overlies the first pinned layer. The second pinned layer overlies the coupling layer, where the second pinned layer is also magnetic.