Magnetoresistive Element Insertion Film Thermal Stability
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Solution Overview
Problem
Current magnetic memory technologies face challenges in achieving high thermal stability and efficient data writing with fine structures, as they tend to agglomerate due to poor wettability between magnetic layers and insulating films, leading to degraded magnetic properties and increased write currents.
Innovation Solution
Incorporating an insertion film, such as a metal or conductive nitride film, between the magnetic layer and the MgO film in the magnetic tunnel junction (MTJ) element to improve surface smoothness and prevent agglomeration, thereby enhancing thermal stability and reducing the damping factor for lower write currents.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If magnetic memory structures are made finer to increase density, then storage capacity improves, but thermal stability deteriorates due to agglomeration
Solution Approach 1:
A magnesium oxide (MgO) insulating film is introduced as an intermediary layer between the magnetic layer and the substrate. This MgO film prevents direct contact and agglomeration between magnetic particles during high-temperature annealing, thereby maintaining thermal stability while enabling fine structure formation for high storage density.
Solution Approach 2:
The MgO insulating film is formed in advance before the magnetic layer is deposited and subjected to high-temperature annealing. This preliminary protective action prevents agglomeration from occurring during the thermal processing stage, allowing the magnetic layer to maintain its fine structure throughout subsequent manufacturing steps.
2Device complexity
If conventional magnetic memory structures are used without insertion films, then device complexity is low, but magnetic properties deteriorate due to agglomeration
Solution Approach 1:
The MgO insulating film serves as a mediator that prevents harmful interactions between the magnetic layer and substrate during thermal processing. This simple intermediary layer effectively prevents agglomeration and maintains magnetic properties without requiring complex multi-layer structures or additional processing steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The insertion film improves the thermal stability and magnetic properties of the MTJ element, allowing for high-temperature annealing without degradation and reducing the write current, resulting in improved MR ratio and element characteristics.
Implementation Method 1
poor wettability between magnetic layers and insulating films
Implementation Method 2
recorded data is read based on a difference of the value of resistance of the MTJ element due to a TMR effect
Implementation Method 3
a spin transfer torque (STT) mode capable of reversing the direction of magnetization of a magnetic substance by passing a current to the magnetic substance
Data Source
AI summary
According to one embodiment, a magnetoresistive effect element includes: a first magnetic layer; a second magnetic layer; a non-magnetic film between the first magnetic layer and the second magnetic layer; a first layer on an opposite side of a side of the non-magnetic layer of the first magnetic layer, the first layer including magnesium oxide as a principal component; and a second layer between the first film and the first magnetic layer, the second layer including a material different from a material of the first layer.