Insulating Film Coverage on MTJ Protuberances

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Solution Overview

Problem

Existing methods for forming insulating films on protuberance portions, such as those in magneto-resistive random access memory (MRAM) devices, fail to provide adequate coverage on both upper and lateral surfaces, particularly during the sputtering process.

Innovation Solution

A method involving a sputtering process where the angle between the workpiece and the target is adjusted to ensure that the insulating film is formed on both the upper and lateral surfaces of the protuberance portions, utilizing a processing apparatus that allows for rotational positioning to enhance film coverage.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If sputtering is used to form an insulating film on a protuberance portion, then the insulating film can be formed on the upper surface, but the coverage on lateral surfaces is insufficient

Engineering Contradiction:

Improveinsulating film coverageVSAvoidfilm deposition uniformity

Core Design Contradiction:

Manufacturing precisionVSEase of operation

Solution Approach 1:

The workpiece is rotated during the sputtering process to dynamically change the angle between the workpiece surface and the target. This rotation enables the insulating film to be deposited uniformly on both the upper surface and lateral surfaces of the protuberance portion, resolving the coverage issue while maintaining deposition quality

Inventive Principle:

Principle #15Dynamics

Solution Approach 2:

The angle between the workpiece and the target is changed during the sputtering process by rotating the workpiece. This parameter change allows the deposition conditions to be optimized for different surfaces (upper and lateral), achieving uniform film coverage across all surfaces of the protuberance portion

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach results in improved coverage of the insulating film on protuberance portions, ensuring uniform deposition on both upper and lateral surfaces, thereby enhancing the reliability and performance of MRAM devices.

Implementation Method 1

forming an insulating film on the workpiece by sputtering

Methodology Applied

Scientific EffectSputtering: Sputtering

Data Source

PatentUS10910215B2Method of forming later insulating films for MTJ

Publication Date: 2021.02.02 TOKYO ELECTRON LTD

AI summary

There is provided a method of forming an insulating film which includes providing a workpiece having a base portion and a protuberance portion formed to protrude from the base portion; and forming an insulating film on the workpiece by sputtering. The forming an insulating film includes forming the insulating film while changing an angle defined between the workpiece and a target.