MTJ Element Shielding Layout for Stray Field Stability
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Solution Overview
Problem
Magnetic tunnel junction (MTJ) devices in MRAM are susceptible to stray fields that can affect the magnetic moment of the free magnetic layer, leading to instability in resistance states and data storage.
Innovation Solution
A magnetic shielding layer is introduced between MTJ elements to shield stray fields, which can be composed of diamagnetic or paramagnetic materials, and is arranged either directly over the elements, within an interlayer dielectric layer, or in a gap between the elements, with optional insulators for electrical isolation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If magnetic tunnel junction elements are arranged closely to increase device density, then productivity is improved, but stray fields from adjacent elements affect the magnetic moment stability
Solution Approach 1:
A magnetic shielding layer is introduced as an intermediary component between adjacent magnetic tunnel junction elements. This shielding layer, positioned between the elements, absorbs or redirects stray magnetic fields generated by one element, preventing them from interfering with the magnetic moment of neighboring elements. This allows dense element arrangement while maintaining magnetic stability.
2Reliability
If a magnetic shielding layer is added between MTJ elements to shield stray fields, then reliability is improved, but device complexity increases
Solution Approach 1:
The magnetic shielding layer is applied locally only in the regions between adjacent magnetic tunnel junction elements, rather than throughout the entire device. This targeted approach provides necessary magnetic field shielding at critical interfaces while avoiding unnecessary complexity in other areas, maintaining a balance between reliability improvement and structural simplicity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The magnetic shielding layer effectively prevents stray fields from influencing the magnetic moment of MTJ elements, enhancing the stability and reliability of resistance states and data storage in MRAM devices.
Implementation Method 1
A magnetic shielding layer is introduced between MTJ elements to shield stray fields, which can be composed of diamagnetic or paramagnetic materials
Implementation Method 2
A magnetic shielding layer is introduced between MTJ elements to shield stray fields, which can be composed of diamagnetic or paramagnetic materials
Data Source
AI summary
A magnetic tunnel junction (MTJ) device includes two magnetic tunnel junction elements and a magnetic shielding layer. The two magnetic tunnel junction elements are arranged side by side. The magnetic shielding layer is disposed between the magnetic tunnel junction elements. A method of forming said magnetic tunnel junction (MTJ) device includes the following steps. An interlayer including a magnetic shielding layer is formed. The interlayer is etched to form recesses in the interlayer. The magnetic tunnel junction elements fill in the recesses. Or, a method of forming said magnetic tunnel junction (MTJ) device includes the following steps. A magnetic tunnel junction layer is formed. The magnetic tunnel junction layer is patterned to form magnetic tunnel junction elements. An interlayer including a magnetic shielding layer is formed between the magnetic tunnel junction elements.