MTJ Sidewall Insulation Using Oxidation and Ion Beam Cycling

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Solution Overview

Problem

The electrical short defects occurring in magnetic tunnel junction structures due to etching by-products during the manufacturing process of magnetic memory devices pose a challenge, affecting the reliability and performance of these devices.

Innovation Solution

A method involving the formation of a sidewall insulating layer by alternately performing oxidation and ion beam irradiation processes on the sidewall metal layer to convert redeposited metal into an insulating layer, thereby preventing electrical shorts and maintaining the integrity of the magnetic tunnel junction structure.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If etching process is performed on magnetic transition metal, then magnetic tunnel junction structure is formed, but electrical short defect occurs due to etching by-product

Engineering Contradiction:

Improvemagnetic tunnel junction structure formationVSAvoidelectrical short defect

Core Design Contradiction:

Manufacturing precisionVSReliability

Solution Approach 1:

The patent converts the harmful etching by-product (redeposited metal on sidewall) into a beneficial component by forming a sidewall metal layer that serves as a sacrificial layer for subsequent oxidation, ultimately creating an insulating sidewall layer that prevents electrical shorts

Inventive Principle:

Principle #22Blessing in disguise (Convert harm into benefit)

Solution Approach 2:

The patent changes the chemical state of the sidewall metal layer from metallic to oxidized state through oxidation treatment, transforming it from a conductive material that causes electrical shorts to an insulating material that prevents them

Inventive Principle:

Principle #35Parameter changes

2Quantity of substance

If redeposited metal remains on sidewall, then etching by-product is retained, but electrical short occurs in magnetic tunnel junction

Engineering Contradiction:

Improveredeposited metal on sidewallVSAvoidelectrical short

Core Design Contradiction:

Quantity of substanceVSReliability

Solution Approach 1:

The patent transforms the unwanted redeposited metal into a useful sidewall metal layer that is intentionally oxidized to create an insulating barrier, converting the harmful substance into a protective feature

Inventive Principle:

Principle #22Blessing in disguise (Convert harm into benefit)

Solution Approach 2:

The patent induces a phase transition in the sidewall metal layer from metallic phase to oxidized phase, changing its electrical properties from conductive to insulating to prevent electrical shorts

Inventive Principle:

Principle #36Phase transitions

3Reliability

If oxidation process is performed on sidewall metal layer, then insulating property is improved, but additional process steps are required

Engineering Contradiction:

Improveinsulating property of sidewallVSAvoidprocess steps

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The patent combines the oxidation process with the existing manufacturing flow, integrating the formation of the sidewall insulating layer into the overall device fabrication process rather than treating it as a completely separate operation

Inventive Principle:

Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach effectively prevents electrical shorts and maintains the electrical and magnetic properties of the magnetic tunnel junction structure, enhancing the reliability and functionality of the magnetic memory device.

Implementation Method 1

performing an oxidizing operation that includes oxidizing an exposed surface of the sidewall metal layer by irradiating an ion beam of oxygen ions toward the exposed surface of the sidewall metal layer

Methodology Applied

Scientific EffectOxidation: Oxidation

Implementation Method 2

performing an irradiating operation that includes irradiating an ion beam toward the oxidized sidewall metal layer

Methodology Applied

Scientific EffectIon beam irradiation: Ion Beam

Data Source

PatentUS12593613B2Method of fabricating memory device including magnetic tunnel junctions with insulating sidewalls

Publication Date: 2026.03.31 SAMSUNG ELECTRONICS CO LTD

AI summary

A method of manufacturing a memory device includes sequentially forming a first magnetization layer, a tunnel barrier layer, and a second magnetization layer on each other; forming a magnetic tunnel junction structure by patterning the first magnetization layer, the tunnel barrier layer, and the second magnetization layer; forming a sidewall metal layer by etching a portion of a redeposited metal covering a sidewall of the magnetic tunnel junction structure; performing an oxidizing operation that includes oxidizing an exposed surface of the sidewall metal layer to provide an oxidized sidewall metal layer; and performing an irradiating operation that includes irradiating an ion beam towards the oxidized sidewall metal layer. A sidewall insulating layer covering a sidewall of the magnetic tunnel junction structure is formed by alternately performing the oxidizing operation and the irradiating operation two or more times.