MTJ Spintronic Gyroscopic Sensor for EMI Resistance
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Solution Overview
Problem
Current gyroscopic sensor devices face challenges in accurately detecting motion in smaller spaces and are susceptible to electromagnetic interference, limiting their application in compact and harsh environments.
Innovation Solution
The development of a magnetic tunnel junction (MTJ) based spintronic sensor device that utilizes resistance changes to detect gyroscopic motion, offering higher density, lighter form factor, and improved resistance to electromagnetic interference through the use of tunnel magnetoresistance effects and integration with magnetoresistive random access memory (MRAM) technology.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If non-magnetic sensors are used to detect gyroscopic motion, then the device can operate in larger spaces with simpler structure, but the device becomes susceptible to electromagnetic interference and occupies more space
Solution Approach 1:
The patent replaces non-magnetic sensors with a magnetic field-based detection system using a magnet and magnetic sensors. This substitution enables the system to detect gyroscopic motion through magnetic field changes rather than relying on electromagnetic principles, thereby achieving resistance to electromagnetic interference while maintaining compact dimensions
Solution Approach 2:
The patent employs a composite structure combining a magnet, magnetic sensors, and a support structure with pivot points. This composite design integrates multiple functional elements into a unified system that achieves both compactness and immunity to electromagnetic interference through the synergistic arrangement of magnetic components
2Area of stationary object
If the sensor device is miniaturized to reduce space occupation, then the device achieves higher density and lighter form factor, but the measurement accuracy of gyroscopic motion may be compromised
Solution Approach 1:
The patent arranges magnetic sensors at multiple angular positions (e.g., 0°, 90°, 180°, 270°) around the magnet, utilizing angular dimensionality to detect gyroscopic motion. This multi-dimensional sensor arrangement enables accurate measurement of rotational movement in compact space by capturing magnetic field variations from different orientations
Solution Approach 2:
The patent divides the sensing function into multiple discrete magnetic sensors positioned at different locations relative to the magnet. Each sensor detects magnetic field changes from a specific angle, and the combined data from segmented sensors provides comprehensive and accurate gyroscopic motion detection while maintaining a compact overall structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The MTJ-based spintronic sensor device provides enhanced accuracy and resistance to electromagnetic interference, enabling effective motion detection in compact and harsh environments, supporting integration with other sensors and MRAM technology for diverse applications.
Implementation Method 1
a magnetic tunnel junction (MTJ) based sensor device that utilizes resistance changes to detect gyroscopic motion, offering higher density, lighter form factor, and improved resistance to electromagnetic interference through the use of tunnel magnetoresistance effects
Data Source
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AI summary
A magnetic tunnel junction (MTJ) based sensor device includes a MTJ element and processing circuitry. The MTJ element includes a free layer, a pinned layer, and a tunnel barrier, the tunnel barrier being arranged above the pinned layer, wherein the free layer is adapted to flex away from the tunnel barrier during gyroscopic motion. The processing circuitry is configured to measure a resistance at the MTJ element and determine gyroscopic motion based on the resistance at the MTJ element.