Magnetic Tunnel Junction Thermal Insulation
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Solution Overview
Problem
Conventional magnetic elements using thermally-assisted switching (TAS) write operations face challenges in efficiently heating the magnetic tunnel junction without damaging it, due to high heating currents required, which can lead to heat losses and potential damage.
Innovation Solution
Incorporating thermal insulating layers, such as a bottom thermal insulating layer made of low-K materials like porous SiO2 or zirconia, between the strap portion and the magnetic tunnel junction, and optionally an upper thermal insulating layer, to reduce heat losses and allow for efficient heating with lower heating currents.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If high heating current is applied to heat the magnetic tunnel junction during TAS write operation, then the magnetic tunnel junction can be heated to the required high threshold temperature, but excessive heat losses occur and potential damage may occur
Solution Approach 1:
The patent introduces a thermal insulating layer as an intermediary between the magnetic tunnel junction and the surrounding structures. This layer acts as a thermal mediator that reduces heat loss to the substrate and adjacent layers, thereby improving heating efficiency and reducing the energy required to reach the threshold temperature for magnetization switching.
Solution Approach 2:
The patent applies thermal insulation specifically at the bottom of the magnetic tunnel junction where heat loss to the substrate is most significant. By placing the thermal insulating layer only in this critical region rather than uniformly throughout the structure, the patent optimizes heat confinement where it is most needed while minimizing additional complexity.
2Temperature
If high heating current is applied to heat the magnetic tunnel junction, then the required temperature can be achieved, but the power consumption increases
Solution Approach 1:
The thermal insulating layer serves as a mediator that reduces the amount of energy required to heat the magnetic tunnel junction to the threshold temperature. By minimizing heat loss to the substrate, the layer reduces the power consumption needed to maintain the required temperature during the write operation.
Solution Approach 2:
The patent changes the thermal parameters of the system by introducing a layer with low thermal conductivity. This parameter change in the thermal insulation properties directly reduces the power consumption by improving the thermal efficiency of the heating process.
3Temperature
If high heating current is applied to heat the magnetic tunnel junction, then the switching operation can be performed, but the endurance decreases
Solution Approach 1:
The thermal insulating layer acts as a protective intermediary that reduces excessive heat exposure to the magnetic tunnel junction. By controlling heat loss rather than allowing uncontrolled heat dissipation, the layer helps prevent thermal damage that would reduce the device's operational lifetime and endurance.
Solution Approach 2:
The thermal insulating layer provides beforehand cushioning against thermal damage by preventing excessive heat from reaching the magnetic tunnel junction. This protective measure is in place before any potential thermal damage can occur, thereby preserving the device's endurance over multiple write operations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The magnetic element can be effectively heated with reduced power consumption and increased endurance, as the thermal insulating layers minimize heat dissipation and allow for more controlled temperature distribution within the magnetic tunnel junction.
Implementation Method 1
the magnetic device can further comprise a bottom thermal insulating layer extending substantially parallel to the strap portion and arranged such that the strap portion is between the magnetic tunnel junction and the bottom thermal insulating layer, for lowering heat losses in the magnetic tunnel junction during the write operation
Implementation Method 2
the magnetic tunnel junction 2 is heated at the high threshold temperature, above TBS but below TBR, by applying a heating current 31 to the magnetic tunnel junction 2
Implementation Method 3
the direction of the second magnetization can be adjusted by by passing a spin polarized electric current or a current induced magnetic switching (CIMS) in the magnetic tunnel junction 2
Data Source
AI summary
The present disclosure concerns a magnetic element to be written using a thermally-assisted switching write operation comprising a magnetic tunnel junction formed from a tunnel barrier being disposed between first and second magnetic layers, said second magnetic layer having a second magnetization which direction can be adjusted during a write operation when the magnetic tunnel junction is heated at a high threshold temperature; an upper current line connected at the upper end of the magnetic tunnel junction; and a strap portion extending laterally and connected to the bottom end of the magnetic tunnel junction; the magnetic device further comprising a bottom thermal insulating layer extending substantially parallel to the strap portion and arranged such that the strap portion is between the magnetic tunnel junction and the bottom thermal insulating layer. The magnetic element allows for reducing heat losses during the write operation and has reduced power consumption.