MTJ Memory Under Layer Structure for Magnetic Anisotropy
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Solution Overview
Problem
Current semiconductor memory devices face challenges in achieving high perpendicular magnetic anisotropy, tunneling magnetoresistance (TMR) values, and thermal stability, particularly in miniaturized electronic devices requiring low power consumption and high performance.
Innovation Solution
The implementation of a semiconductor memory device with a magnetic tunnel junction (MTJ) structure, including a free layer with changeable magnetization, a pinned layer, and a tunnel barrier layer, is enhanced by using a multi-layered under structure comprising a silicon-based alloy and a heavy metal layer, which improves magnetic anisotropy and TMR values, and incorporates a magnetic correction layer to reduce stray magnetic fields.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional single-layer under layer is used in the MTJ structure, then the device complexity is low, but the perpendicular magnetic anisotropy and TMR values are insufficient
Solution Approach 1:
The under layer is constructed as a composite structure with a first under layer (e.g., Ta, W, Pt, Pd) and a second under layer (e.g., Ru, Rh, Ir), where each layer contributes different properties. This composite configuration enhances perpendicular magnetic anisotropy and TMR values compared to single-layer structures, while maintaining controllable complexity through material selection and thickness optimization.
Solution Approach 2:
The invention optimizes specific parameters including the thickness of each under layer (typically 1-10 nm range), the material composition ratios, and the interface structure between layers. By adjusting these parameters, the perpendicular magnetic anisotropy and TMR values can be tuned to achieve desired performance levels for miniaturized devices.
2Use of energy by moving object
If the MTJ structure is miniaturized for low power consumption, then the power consumption decreases, but the thermal stability and magnetic anisotropy deteriorate
Solution Approach 1:
The multi-layer under layer structure with specific material combinations (e.g., Ta/Ru, W/Rh, Pt/Ir) provides enhanced thermal stability even as the MTJ device size is reduced. The interface between different materials creates strong spin-orbit coupling that maintains magnetic anisotropy at smaller dimensions, enabling low-power operation without sacrificing thermal stability.
Solution Approach 2:
The invention introduces local quality variations through the multi-layer under layer structure, where each layer has specific material properties optimized for its function. The first under layer provides one set of magnetic and structural properties, while the second under layer provides complementary properties, creating localized enhancements that maintain performance in miniaturized devices.
3Reliability
If a multi-layered under layer structure is implemented, then the TMR values and magnetic anisotropy improve, but the manufacturing precision requirements increase
Solution Approach 1:
The invention establishes specific parameter ranges for the under layer structure (thicknesses of 1-10 nm for each layer, total under layer thickness of 2-20 nm) that balance performance enhancement with manufacturing feasibility. These parameter specifications allow for improved TMR values and magnetic anisotropy while remaining within the capabilities of standard semiconductor fabrication processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the variable resistance element's performance by increasing perpendicular magnetic anisotropy, TMR values, and thermal stability, enabling better data storage characteristics and operational efficiency in miniaturized electronic devices.
Implementation Method 1
a magnetic tunnel junction (MTJ) structure including a free layer having a changeable magnetization direction, a pinned layer having a pinned magnetization direction, and a tunnel barrier layer sandwiched between the free layer and the pinned layer
Implementation Method 2
the under layer includes a first under layer including a silicon-based alloy, and a second under layer located on the first under layer and including a metal
Implementation Method 3
improves magnetic anisotropy and TMR values
Implementation Method 4
incorporates a magnetic correction layer to reduce stray magnetic fields
Data Source
AI summary
Implementations of the disclosed technology provide an electronic device including a semiconductor memory, wherein the semiconductor memory includes: a magnetic tunnel junction (MTJ) structure including a free layer having a changeable magnetization direction, a pinned layer having a pinned magnetization direction, and a tunnel barrier layer sandwiched between the free layer and the pinned layer; and an under layer located under the MTJ structure, wherein the under layer includes a first under layer including a silicon-based alloy, and a second under layer located on the first under layer and including a metal.