μ-LED Dual-Gate PWM Control for Compact Pixel Addressing

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Solution Overview

Problem

The challenge in developing μ-LED displays for automotive and augmented reality applications lies in the limited space for light-generating components, which complicates the addressing and control of individual pixels, and requires innovative solutions for efficient light management and control.

Innovation Solution

The proposed solution involves a device for electronic control and power supply of μ-LEDs, utilizing a dual-gate transistor connected in series with the μ-LED, where the additional control gate of the dual-gate transistor is modulated with a PWM signal to control the brightness of the μ-LED, and a select-hold circuit with a charge accumulator to manage the current conduction.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of operation

If conventional control circuits are used for μ-LED displays, then the display can be controlled, but the space requirements and device complexity increase

Engineering Contradiction:
Improvecontrol capabilityVSAvoidcircuit complexity
Core Design Contradiction:
Ease of operationVSDevice complexity

Solution Approach 1:

The patent combines the control gate and select gate functions into a single dual-gate transistor structure. The first control gate receives control signals while the second control gate receives select signals, merging what would traditionally require separate transistors into one integrated component. This reduces the number of discrete components and simplifies the overall circuit architecture while maintaining full control capability over the μ-LED array.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The dual-gate transistor serves multiple functions simultaneously: it acts as a control element for brightness modulation via PWM on the first control gate, and as a selection element for row or column addressing on the second control gate. This multi-functionality eliminates the need for separate control and selection circuits, reducing device complexity while preserving operational capabilities.

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Manufacturing precision

If more control components are added to manage μ-LED pixels, then individual pixel control improves, but the space requirements increase

Engineering Contradiction:
Improvepixel addressing precisionVSAvoiddisplay area
Core Design Contradiction:
Manufacturing precisionVSArea of stationary object

Solution Approach 1:

The patent merges control and selection functionality into a single dual-gate transistor per pixel row or column. By using the first control gate for PWM modulation and the second control gate for selection, the design eliminates the need for separate control transistors that would otherwise be required for each pixel, thereby reducing the overall area while maintaining precise addressing capability.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The patent employs a matrix addressing scheme where control is achieved through two-dimensional row and column selection rather than individual pixel control. The dual-gate transistor enables this by handling both selection and control signals, allowing precise pixel addressing through the intersection of selected rows and columns, which significantly reduces the number of components needed compared to direct pixel control.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Illumination intensity

If PWM modulation is implemented for brightness control, then brightness dynamic range improves, but the control circuit complexity increases

Engineering Contradiction:
Improvebrightness control rangeVSAvoidcontrol signal complexity
Core Design Contradiction:
Illumination intensityVSDevice complexity

Solution Approach 1:

The first control gate of the dual-gate transistor is designed to receive PWM modulation signals for brightness control while the same gate structure is used for conventional voltage control. This multi-functional approach allows the circuit to achieve wide brightness dynamic range through PWM without requiring separate dedicated PWM control circuits, thereby limiting the increase in overall control circuit complexity.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The dual-gate transistor itself acts as an intermediary that translates PWM control signals into appropriate current modulation for the μ-LED. The transistor's unique dual-gate structure allows it to process PWM signals directly at the gate level, converting them into the necessary current variations without requiring additional PWM decoding or conversion circuits, thus simplifying the overall control architecture.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach allows for efficient pulse-width modulation of μ-LEDs, reducing space requirements and improving brightness control, enabling high dynamic brightness range and contrast necessary for automotive and augmented reality applications.

Implementation Method 1

the additional control gate of the dual-gate transistor is modulated with a PWM signal to control the brightness of the μ-LED

Methodology Applied
Scientific EffectPulse-width modulation:

Implementation Method 2

μ-LED, μ-LED device

Methodology Applied
Scientific EffectLight emitting diode effect: Light Emitting Diode

Implementation Method 3

a select-hold circuit with a charge accumulator to manage the current conduction

Methodology Applied
Scientific EffectCapacitance: Capacitance

Data Source

PatentUS12205522B2μ-LED, μ-LED device, display and method for the same
Publication Date: 2025.01.21 OSRAM OPTO SEMICON GMBH & CO OHG
  • US12205522B2 patent drawing
  • US12205522B2 patent drawing
  • US12205522B2 patent drawing

AI summary

The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.