μLED Electroluminescent Structure With 3D Cavities for Light Conversion

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Solution Overview

Problem

Current micro light-emitting diode (μLED) displays face limitations in light conversion efficiency due to the need for increased quantum dot concentration or encapsulating thickness in optical conversion materials, which raises manufacturing costs and hinders miniaturization and thinning of the displays.

Innovation Solution

The electroluminescent device incorporates a semiconductor layer with regularly arranged 3D structures that define cavities, allowing an optical conversion material to be filled within these cavities, thereby enhancing light absorption and conversion efficiency without increasing the overall thickness of the optical conversion material or the concentration of quantum dots.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Loss of energy

If the concentration of quantum dots in optical conversion materials is increased to improve light conversion efficiency, then the light conversion efficiency is improved, but the manufacturing cost increases

Engineering Contradiction:
Improvelight conversion efficiencyVSAvoidmanufacturing cost
Core Design Contradiction:
Loss of energyVSEase of manufacture

Solution Approach 1:

The patent transitions from a planar optical conversion layer to a three-dimensional cavity structure. The optical conversion material is positioned within cavities that extend into the semiconductor layer, creating vertical light-matter interaction paths. This dimensional change increases the effective interaction volume and light absorption probability without increasing the planar area or material concentration, thereby improving conversion efficiency while controlling manufacturing costs.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The semiconductor layer is designed with a porous or cavity-containing structure where optical conversion materials are positioned within these cavities. This porous architecture increases the surface area and light-trapping capability within a given volume, enhancing light conversion efficiency without requiring higher quantum dot concentrations, thus avoiding increased manufacturing costs.

Inventive Principle:
Principle #31Porous materials

2Loss of energy

If the encapsulating thickness of optical conversion materials is increased to improve light absorption efficiency, then the light absorption efficiency is improved, but the miniaturization of μLED dies is hindered

Engineering Contradiction:
Improvelight absorption efficiencyVSAvoidμLED die size
Core Design Contradiction:
Loss of energyVSVolume of moving object

Solution Approach 1:

Instead of increasing the planar thickness of the optical conversion layer, the patent utilizes vertical cavities that extend into the semiconductor layer. This creates extended light interaction paths in the vertical dimension while maintaining a thin overall device profile, improving light absorption efficiency without increasing the μLED die volume.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The optical conversion material is nested within cavities formed in the semiconductor layer. This nesting arrangement allows the optical conversion function to be integrated within the existing device structure, maximizing light absorption within a compact volume and enabling miniaturization of the μLED dies.

Inventive Principle:
Principle #7Nested doll (Nesting)

3Loss of energy

If the encapsulating thickness of optical conversion materials is increased to improve light conversion efficiency, then the light conversion efficiency is improved, but the thinning of μLED display is limited

Engineering Contradiction:
Improvelight conversion efficiencyVSAvoiddisplay thickness
Core Design Contradiction:
Loss of energyVSLength of stationary object

Solution Approach 1:

The patent employs vertical cavities that extend into the semiconductor layer to increase the light interaction path length without increasing the overall display thickness. By utilizing the vertical dimension within the existing device profile, the design achieves improved light conversion efficiency while maintaining a thin display form factor.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The cavity structure creates a porous architecture within the semiconductor layer, increasing the effective surface area and light-trapping capability. This allows enhanced light conversion efficiency within a thin device profile, as the porous structure provides extended interaction paths without adding to the overall thickness of the display.

Inventive Principle:
Principle #31Porous materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach improves light absorption/conversion efficiency, reduces manufacturing costs, and enables the miniaturization and thinning of electroluminescent devices and μLED displays.

Implementation Method 1

the monochromatic light emitted from the μLED dies passes through optical conversion materials, such as photoluminescence fluorescent materials (e.g., photoluminescence phosphor), Quantum Dots (QD) materials, luminescent dyes

Methodology Applied
Scientific EffectPhotoluminescence: Photoluminescence

Data Source

PatentUS12328981B2Electroluminescent device and display apparatus applying the same
Publication Date: 2025.06.10 AU OPTRONICS CORP
  • US12328981B2 patent drawing
  • US12328981B2 patent drawing
  • US12328981B2 patent drawing

AI summary

An electroluminescent device, wherein the electroluminescent device includes a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, an active layer, a first electrode, a second electrode, and an optical conversion material. The active layer is disposed between the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer and electrically connected with these two. The first-conductivity-type semiconductor layer has a light-emitting surface disposed on a side opposite to the active layer, and includes a plurality of 3D structures arranged regularly, extending from the light-emitting surface towards the active layer to jointly define at least one cavity having a depth greater than 70% a thickness of the first-conductivity-type semiconductor layer. The optical conversion material is filled in the cavity.