μLED Emitter Size Definition Without Dry-Etch Surface Defects
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Solution Overview
Problem
The dry-etching process used in manufacturing micrometer-scale light-emitting diodes (μLEDs) introduces surface defects and limits the brightness of VR/AR devices by trapping electrons, impairing the immersive experience.
Innovation Solution
Implementing a combination of partial dry etching, band-gap tuning, and atomic diffusion outside the active emitting region, including impurity-free and impurity-induced layer disordering, to enhance carrier confinement and photon emission.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If dry-etching process is used to define emitter size, then manufacturing precision is improved, but surface defects are introduced that trap electrons and reduce brightness
Solution Approach 1:
The patent extracts the harmful dry-etching process from the manufacturing sequence and replaces it with alternative methods (wet etching, selective area growth, band-gap tuning) that define emitter size without creating electron-trapping surface defects, thereby maintaining precision while eliminating the harmful effect
Solution Approach 2:
The patent converts the previously harmful surface defects into beneficial band-gap engineered regions. By intentionally creating controlled defects and using band-gap tuning, the regions that would normally trap electrons are transformed into carrier confinement zones that improve light extraction efficiency without sacrificing brightness
2Illumination intensity
If carrier confinement is increased to reduce recombination losses, then brightness is improved, but device complexity increases
Solution Approach 1:
The patent changes material parameters (band-gap energy, composition gradients) rather than significantly altering structural complexity. By tuning band-gap values and creating composition profiles in existing layer structures, carrier confinement is achieved through parameter optimization rather than adding complex structural elements
Solution Approach 2:
The patent makes existing semiconductor layers serve multiple functions: they simultaneously provide structural support, optical confinement, and carrier confinement through band-gap engineering. This multi-functionality reduces the need for additional specialized structures, maintaining device simplicity while achieving improved brightness
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach increases the brightness of μLEDs by confining carriers within a small region, reducing recombination losses and improving light extraction, thereby enhancing VR/AR display technologies.
Implementation Method 1
causing the material to disorder regions of a light-emitting layer included in the layered structure, wherein the material is disordered by ion implantation
Implementation Method 2
causing the material to disorder regions of a light-emitting layer included in the layered structure, wherein the material is disordered by atomic diffusion
Implementation Method 3
light-emitting device with increased carrier confinement... light-emitting layer disposed between semiconductor layers
Data Source
AI summary
A method for increasing carrier confinement in light-emitting devices may comprise (1) selectively depositing material over a layered structure of a light-emitting device and (2) defining an emitter size of the light-emitting device by causing the material to disorder regions of a light-emitting layer included in the layered structure. Various other apparatuses, systems, and methods are also disclosed.