μLED Protection Region Layout for Lower Surface Recombination

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Solution Overview

Problem

Optoelectronic semiconductor components face inefficiencies due to non-radiative recombination processes at lateral surfaces, particularly in red-emitting μLEDs based on indium gallium aluminum phosphide semiconductor material, which have high surface recombination velocity and large charge carrier diffusion length.

Innovation Solution

The introduction of a first protection region along the lateral surface of the semiconductor body, with a higher dopant concentration than the injection region, and a shielding region with lower surface recombination velocity, reduces charge carrier density and non-radiative recombination probabilities by covering the lateral surfaces and controlling the extension of the protection region.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If a conventional semiconductor structure without protection regions is used, then the device structure is simple, but non-radiative recombination occurs at lateral surfaces reducing efficiency

Engineering Contradiction:

Improvestructure simplicityVSAvoidnon-radiative recombination loss

Core Design Contradiction:

Ease of manufactureVSLoss of energy

Solution Approach 1:

The semiconductor device is segmented into distinct functional regions: injection regions, protection regions with higher dopant concentration, and active regions. This segmentation isolates the active region from lateral surfaces, preventing carrier leakage while maintaining manufacturing feasibility through region-specific doping profiles

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

Different regions of the semiconductor device are assigned different dopant concentrations tailored to their specific functions. The protection regions have higher dopant concentration than injection regions, creating localized electrical properties that control carrier distribution and prevent non-radiative recombination at critical interfaces

Inventive Principle:

Principle #3Local quality

2Productivity

If the dopant concentration in protection regions is increased to reduce non-radiative recombination, then radiation generation efficiency is improved, but manufacturing precision requirements increase

Engineering Contradiction:

Improveradiation generation efficiencyVSAvoiddopant concentration control

Core Design Contradiction:

ProductivityVSManufacturing precision

Solution Approach 1:

The protection regions are doped with dopant concentration exceeding that of injection regions, creating an excessive doping profile that ensures complete carrier confinement. This partial over-doping approach guarantees efficiency improvement while the excess dopant is confined to specific protection regions, making the precision requirement manageable through localized rather than global control

Inventive Principle:

Principle #16Partial or excessive action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances the efficiency of the optoelectronic semiconductor component by reducing non-radiative recombination probabilities and increasing the efficiency of radiation generation or detection, particularly in red-emitting diodes.

Implementation Method 1

The first injection region is a region of the semiconductor body into which a first doping material is introduced. The second injection region is a further region of the semiconductor body into which a second doping material is introduced.

Methodology Applied

Scientific EffectDoping: Dopants

Implementation Method 2

non-radiative recombination processes at lateral surfaces, particularly in red-emitting μLEDs based on indium gallium aluminum phosphide semiconductor material

Methodology Applied

Scientific EffectNon-radiative recombination:

Implementation Method 3

The active region has, for example, a pn junction and a double heterostructure for radiation generation or radiation detection

Methodology Applied

Scientific EffectRadiative recombination:

Data Source

PatentUS20240063331A1Optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component

Publication Date: 2024.02.22 AMS OSRAM INT GMBH

AI summary

The invention relates to an optoelectronic semiconductor component that includes a semiconductor body with a first injection region, in which a first protection region is formed, a second injection region, in which a second protection region is formed, and an active region, which is designed to generate electromagnetic radiation and which is arranged between the first injection region and the second injection region. The first injection region and the first protection region have a first conductivity type, and the second injection region and the second protection region have a second conductivity type. The first protection region extends along a lateral surface of the semiconductor body from a first injection region face facing away from the active region into the second injection region and completely passes through the active region. The invention additionally relates to a method for producing an optoelectronic semiconductor component.