μLED Support Fragment Structure for Dense Wafer Transfer
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Solution Overview
Problem
Existing micro-light-emitting diode (μLED) semiconductor structures face challenges with tether-type weakened structures occupying additional substrate space and anchor-type structures experiencing poor pick-up due to solid support, limiting the number of μLEDs that can be produced and affecting transfer efficiency.
Innovation Solution
A semiconductor structure with a support fragment having an annular breaking surface is introduced, which connects between the electrodes of a micro semiconductor device without occupying additional substrate space, allowing for easy disconnection and increased production density, and a method to form this structure involving sacrificial layers and a support structure that can be broken off without damaging the device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If tether-type weakened structures are used to connect micro-light-emitting diodes to the substrate, then the connection strength is improved, but the substrate area occupied increases, reducing the number of μLEDs that can be produced on a single wafer
Solution Approach 1:
The support structure transitions from a two-dimensional planar configuration to a three-dimensional configuration by extending vertically between the electrodes. This vertical extension allows the support structure to provide mechanical strength and connection functionality without occupying additional lateral substrate area, thereby resolving the contradiction between connection strength and substrate area utilization.
2Area of stationary object
If anchor-type weakened structures with solid support are used, then the substrate area is saved, but the pick-up efficiency deteriorates due to poor disconnection
Solution Approach 1:
The support structure incorporates localized weak points or reduced thickness regions specifically at the connection interfaces between the support structure and the electrodes. This local modification creates controlled fracture zones that enable easy disconnection during pick-up operations, while the overall three-dimensional structure maintains adequate mechanical support, thus resolving the contradiction between substrate area savings and pick-up efficiency.
3Stability of the object's composition
If traditional weakened structures are used, then the structural support is provided, but the production density is limited due to additional space requirements and transfer difficulties
Solution Approach 1:
By transitioning from planar to three-dimensional support structures that extend vertically between electrodes, the patent maximizes the use of vertical space rather than lateral space. This dimensional change enables higher production density on the substrate while maintaining structural support functionality, directly addressing the productivity limitation.
Data Source
AI summary
A semiconductor structure includes a micro semiconductor device and a support fragment. The micro semiconductor device has a first surface and a second surface opposite the first surface. The micro semiconductor device includes a first electrode and a second electrode on the first surface. The first electrode and the second electrode are separated from each other. The support fragment is left on the micro semiconductor device and positioned corresponding to the region between the main portion of the first electrode and the second electrode in the vertical direction. The support fragment has an annular breaking surface in a plan view of the support fragment.