Multi-Angle Gas Supply for Semiconductor Film Thickness Control
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Solution Overview
Problem
Existing substrate processing technologies face challenges in achieving precise control over the thickness distribution of films formed on substrates, particularly in semiconductor device manufacturing.
Innovation Solution
A substrate processing apparatus is designed with a gas supply system that includes multiple gas supply ports to supply process gases to the substrate from different directions, allowing for improved control over the film thickness distribution by adjusting the gas flow angles and ratios.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a single gas supply port is used to supply process gas to the substrate, then the device complexity is reduced, but the manufacturing precision of film thickness distribution deteriorates
Solution Approach 1:
The gas supply system is segmented into multiple gas supply ports (first gas supply port and second gas supply port) positioned at different locations and orientations relative to the substrate. Each port supplies process gas along different directions, enabling independent control of gas flow to different regions of the substrate, thereby achieving precise film thickness distribution control
Solution Approach 2:
Different regions of the substrate receive process gas with different characteristics through the multiple gas supply ports. The first gas supply port supplies gas along a direction more inclined toward the radial direction, while the second gas supply port supplies gas along a direction more inclined toward the tangential direction, creating locally optimized gas flow patterns for different substrate regions to achieve uniform film thickness
2Manufacturing precision
If multiple gas supply ports are used to improve film thickness uniformity, then the manufacturing precision is improved, but the device complexity increases
Solution Approach 1:
The gas supply system employs asymmetric positioning and orientation of gas supply ports relative to the substrate. The first gas supply port is positioned and oriented to supply gas with a flow direction more inclined toward the radial direction, while the second gas supply port is positioned and oriented to supply gas with a flow direction more inclined toward the tangential direction, creating an asymmetric but balanced gas distribution pattern
Solution Approach 2:
The gas supply system adds dimensional complexity by introducing gas supply from multiple spatial directions rather than from a single point. The first gas supply port supplies gas along a direction more inclined toward the radial direction, while the second gas supply port supplies gas along a direction more inclined toward the tangential direction, creating a three-dimensional gas flow pattern that enhances film thickness uniformity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus enhances the controllability of film thickness distribution, enabling the adjustment of film thickness from central convex to flat or central concave distributions, thereby improving the uniformity and quality of semiconductor films.
Implementation Method 1
a process chamber in which a substrate is capable of being accommodated; and a gas supply system configured to supply a first process gas into the process chamber
Data Source
AI summary
Described herein is a technique capable of improving the controllability of firm thickness distribution. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber; a first and a second gas supply system; an exhaust system; and a controller for controlling the first and the second gas supply system and the exhaust system to form a film. The first gas supply system includes: a first and a second storage part; a first gas supply port for supplying a gas stored in the first storage part from an outer periphery toward a center of a substrate; and a second gas supply for supplying the gas stored in the second storage part from the outer periphery along a direction more inclined toward the outer periphery than a direction from the outer periphery toward the center of the substrate.