Multi-Area Selective Etching Using Angled Ion Beams
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Solution Overview
Problem
Current manufacturing methods for optical components, such as slanted gratings, are limited by inefficient patterning and etching processes, which restrict the cost-effectiveness and quality of augmented reality glasses, especially as devices become smaller and more complex, requiring high-volume production of gratings with varied angles and orientations on standard industry equipment.
Innovation Solution
A system utilizing a plasma source to deliver angled ion beams to a substrate with multiple blocking masks, allowing for the formation of multiple angled gratings on each device, eliminating the need for lithography masking and enabling efficient manufacturing by using multiple ion beams to achieve varied angles and depths without removing the substrate from the tool.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If current patterning and etching methods are used, then manufacturing process is simpler, but manufacturing precision and productivity are limited
Solution Approach 1:
The patent divides the substrate into multiple target areas, each requiring different grating parameters. By segmenting the etching process into area-specific operations with selective masking, the system achieves precise control over grating angles and orientations in different regions while maintaining high throughput through parallel processing capabilities.
Solution Approach 2:
The patent employs dynamic control of the ion beam system, including adjustable beam angles, variable etching rates, and real-time parameter modification during the etching process. This dynamic approach enables precise fabrication of gratings with varied angles and orientations without sacrificing productivity, as the system can adapt parameters on-the-fly for different target areas.
2Manufacturing precision
If lithography masking is used for multi-area patterning, then manufacturing precision is maintained, but device complexity and manufacturing time increase
Solution Approach 1:
The patent extracts and eliminates the lithography masking step from the manufacturing process. Instead of using complex photomasks to define grating patterns, the system directly patterns the gratings through controlled ion beam etching with selective area masking, significantly simplifying the device complexity while maintaining pattern accuracy.
Solution Approach 2:
The patent introduces a selective masking layer as an intermediary between the ion beam and substrate. This masking layer enables precise area-selective etching without requiring complex lithography masks, as it can be deposited and patterned more simply, then removed after the etching process, thereby reducing overall manufacturing complexity.
3Ease of manufacture
If standard industry equipment is used, then equipment cost is lower, but manufacturing precision for varied gratings is limited
Solution Approach 1:
The patent utilizes parameter changes in the ion beam system, including beam energy, angle, flux, and composition, to achieve precise control over grating parameters such as angle, orientation, and depth. By dynamically adjusting these parameters during etching, the system can fabricate varied gratings with high precision using standard industry equipment, bridging the gap between equipment accessibility and manufacturing precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances manufacturing efficiency by increasing throughput while maintaining lateral fidelity, allowing for the production of optically efficient gratings with varied angles and depths without the need for complex lithography masking, thus improving the cost-effectiveness and quality of optical components.
Implementation Method 1
A plasma source is delivered a plurality of angled ion beams to a substrate
Implementation Method 2
delivering, from the plasma source, a plurality of angled ion beams towards the substrate
Implementation Method 3
A first blocking mask of the plurality of blocking masks may include a first set of openings permitting the plurality of angled ion beams to pass therethrough
Data Source
AI summary
Embodiments herein provide systems and methods for multi-area selecting etching. In some embodiments, a system may include a plasma source delivering a plurality of angled ion beams to a substrate, the substrate including a plurality of devices. Each of the plurality of devices may include a first angled grating and a second angled grating. The system may further include a plurality of blocking masks positionable between the plasma source and the substrate. A first blocking mask of the plurality of blocking masks may include a first set of openings permitting the angled ion beams to pass therethrough to form the first angled gratings of each of the plurality of devices. A second blocking mask of the plurality of blocking masks may include a second set of openings permitting the angled ion beams to pass therethrough to form the second angled gratings of each of the plurality of devices.