Multi-Beam Deflector Arrays for High-Throughput Lithography
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Solution Overview
Problem
Current electron beam lithography technologies face challenges in high-resolution structuring of substrates with high throughput, limited flexibility in structural patterns, and increased complexity in beam control, leading to reduced productivity and quality due to fixed beam geometries and high data requirements.
Innovation Solution
The solution involves a multi-beam deflector system with at least three multi-beam deflector arrays arranged strategically to generate and control individually shaped particle beams, allowing for variable beam cross-sections and positions on a substrate, using multi-format aperture arrays and a condenser lens system for high-resolution structuring without mechanical aperture changes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If massively parallel multi-beam systems with large arrays are used to increase throughput, then substrate throughput is improved, but device complexity and data requirements increase significantly
Solution Approach 1:
The system segments the beam control function into multiple stages: a first deflection system for coarse positioning and a second deflection system for fine positioning. This segmentation allows each subsystem to handle a portion of the control task, reducing the complexity burden on any single component while maintaining high throughput capability
Solution Approach 2:
The patent introduces a temporal dimension to the beam control by implementing sequential exposure modes where beams are activated in different time slots. This time-multiplexing approach reduces the simultaneous data processing requirements compared to fully parallel operation, thereby reducing system complexity while maintaining productivity
2Productivity
If character projection methods with fixed aperture geometry are used, then writing speed is improved, but flexibility in structural patterns is lost
Solution Approach 1:
The patent implements dynamically adjustable aperture geometries that can be reconfigured between exposure cycles. The aperture system transitions from fixed to variable geometry, allowing the same hardware to achieve both high-speed fixed-pattern exposure and flexible custom-pattern exposure by adjusting the aperture configuration
Solution Approach 2:
The system changes the aperture geometry parameters (shape, size, position) on-demand based on the exposure requirements. By modifying these parameters rather than using fixed apertures, the system maintains writing speed while gaining flexibility to adapt to different structural patterns
3Ease of operation
If constant current density within characters is used, then exposure simplicity is maintained, but proximity effect correction quality deteriorates
Solution Approach 1:
The patent implements variable current density distribution across different regions of the beam profile. By applying different current densities to different local areas (higher at edges, lower at centers), the system achieves effective proximity effect correction while maintaining operational simplicity through automated control
4Manufacturing precision
If multiple exposures with small positional offset are used to achieve placement accuracy, then positional accuracy is improved, but productivity is reduced
Solution Approach 1:
The patent performs preliminary positioning calculations and beam trajectory planning before the actual exposure. By pre-computing the optimal beam paths and positions, the system achieves high placement accuracy in a single pass without requiring multiple repeated exposures, thereby maintaining productivity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables high-resolution structuring with high substrate throughput, maintaining flexibility in structural patterns and reducing complexity in beam control, thereby enhancing productivity and quality by allowing simultaneous exposure of various structures with precise beam positioning and shaping.
Implementation Method 1
a second multi-format aperture array, onto which the first multi-format aperture array is imaged by means of a condenser lens system and which has aperture openings adapted to the first multi-aperture array, taking into account the imaging scale
Implementation Method 2
at least three multi-beam deflector arrays for individual deflection of the partial particle beams are assigned to the first multi-format aperture array and the second multi-format aperture array
Implementation Method 3
at least one-stage reduction optics for a reduced image of the partial particle beams transmitted by the second aperture aperture array on a substrate
Data Source
Figure 1
Figure 2
Figure 3a~3b
AI summary
The invention relates to an arrangement for illuminating a substrate with several individually shaped, controllable particle beams, particularly for electron beam lithography in the semiconductor industry. The object of finding a new method for illuminating a substrate (91) with several individually shaped, controllable particle partial beams (118) that allows high-resolution structuring of substrates with a high substrate throughput, without limiting the flexibility of the applicable structural patterns or restricting the high substrate throughput due to required flexibility, is achieved according to the invention by designing a first and a second aperture array as multi-format aperture arrays (41, 42) for generating particle partial beams (118) with different beam cross-sections and by connecting at least three multi-beam deflector arrays (51, 52, 53) to the first and the second multi-format aperture arrays (41, 42).53) are assigned for the individual deflection of the particle partial beams (118), wherein at least one multi-beam deflector array (51) is arranged between the first and second multi-format aperture arrays (41, 42) to generate different cross-sections of the particle partial beams (118), at least one second multi-beam deflector array (52) is arranged near the second multi-format aperture array (42) to deflect or scan individual particle partial beams (118) into individual crossovers, and at least one third multi-beam deflector array (53) is arranged downstream of the second multi-format aperture array (42) at a distance of 10-20% of the distance to the nearest crossover (112) to generate different positions of the particle partial beams (118) on the substrate (91).