Multi-Beam Deflector Array Trench Electrodes
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Solution Overview
Problem
Existing multi-beam deflector array devices face challenges in shielding against cross-talking and are costly to produce, with complex electrode formation processes that are sensitive to deformation and stress, and electrodes with substantial height limit electric field strength due to stray fields.
Innovation Solution
A method involving generating trenches on a CMOS wafer, filling them with conductive material to form trench electrodes, and structuring openings between electrodes, which are embedded in the wafer material, allowing for a multi-beam deflector array device with reduced process steps and cost, using established semiconductor techniques like DRIE and passivation with materials like silicon nitride and silicon dioxide.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If electrodes are formed by perpendicular growth using electroplating techniques, then electrode shielding against cross-talking is improved, but device complexity and manufacturing cost increase
Solution Approach 1:
The patent divides the electrode structure into multiple segments: a first electrode extending from the front surface, a second electrode extending from the back surface, and both electrodes terminating before reaching the center of the opening. This segmentation allows each electrode to provide shielding independently while avoiding the need for complex perpendicular growth processes, thus reducing manufacturing complexity while maintaining cross-talk shielding effectiveness.
2Object-affected harmful factors
If electrodes are formed by perpendicular growth using electroplating techniques, then electrode shielding against cross-talking is improved, but production cost increases
Solution Approach 1:
The patent divides the electrode structure into multiple segments: a first electrode extending from the front surface, a second electrode extending from the back surface, and both electrodes terminating before reaching the center of the opening. This segmentation allows each electrode to provide shielding independently while avoiding the need for complex perpendicular growth processes, thus reducing manufacturing complexity while maintaining cross-talk shielding effectiveness.
3Object-affected harmful factors
If electrodes have substantial height, then cross-talking shielding is improved, but electric field strength is limited due to stray fields
Solution Approach 1:
The patent divides the electrode structure into multiple segments: a first electrode extending from the front surface and a second electrode extending from the back surface, both terminating before the center. This segmentation allows the electrodes to provide effective cross-talk shielding through their extended lengths while maintaining sufficient spacing from the opening center, thereby preventing excessive stray fields that would limit the applied electric field strength.
Solution Approach 2:
The patent utilizes both the front and back surfaces of the opening by extending electrodes from opposite directions (adding a spatial dimension). This approach provides effective cross-talk shielding through the extended electrode lengths without requiring excessive height from a single direction, thus avoiding the stray field limitations that would occur with substantially tall single-sided electrodes.
4Object-affected harmful factors
If complex electrode formation processes are used, then electrode shielding performance is improved, but process sensitivity to deformation and stress increases
Solution Approach 1:
The patent divides the electrode structure into multiple segments: a first electrode extending from the front surface and a second electrode extending from the back surface. This segmentation simplifies the formation process by allowing electrodes to be created using standard planar deposition techniques rather than complex perpendicular growth, thereby reducing sensitivity to deformation and stress while maintaining effective cross-talk shielding.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach produces a high-functionality multi-beam deflector array device with reduced cross-talk and lower production costs, utilizing trench electrodes that are mechanically and electrically isolated, effectively managing stray fields and enhancing beam control.
Implementation Method 1
depositing a conducting filling material into the trenches, thus creating columns of filling material designed to serve as electrodes
Implementation Method 2
passivating the sidewalls and bottom surfaces of the trenches
Implementation Method 3
passivating the sidewalls and bottom surfaces of the trenches
Implementation Method 4
each opening being associated with at least one pair of trench electrodes, embedded in the wafer material that forms the multi-beam deflector array means
Implementation Method 5
multi-beam deflector array device for use in a particle-beam exposure apparatus
Data Source
AI summary
The disclosure relates to a method for producing a multi-beam deflector array device with a plurality of openings for use in a particle-beam exposure apparatus, in particular a projection lithography system, said method starting from a CMOS wafer and comprising the steps of generating at least one pair of parallel trenches on the first side of the wafer blank at the edges of an area where the circuitry layer below is non-functional, the trenches reaching into the layer of bulk material; passivating the sidewalls and bottom of the trenches; depositing a conducting filling material into the trenches, thus creating columns of filling material serving as electrodes; attaching metallic contact means to the top of the electrodes; structuring of an opening between the electrodes, said opening stretching across abovementioned area so that the columns are arranged opposite of each other on the sidewalls of the opening.