Multi-beam Exposure Apparatus for Complex Semiconductor Patterns
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Solution Overview
Problem
Conventional multi-beam exposure techniques face difficulties in machining line patterns with different line widths and pitches using charged particle beams, limiting the ability to form complex semiconductor device patterns.
Innovation Solution
An exposure apparatus that generates and controls multiple charged particle beams with varying irradiation positions, allowing for selective irradiation and precise control along the line pattern, enabling the formation of patterns with different line widths and pitches by scanning and adjusting the beam positions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional multi-beam exposure techniques are used, then processing speed is improved, but the ability to machine line patterns with different line widths and pitches deteriorates
Solution Approach 1:
The patent implements dynamic control of the charged particle beam system by enabling real-time selection and switching between multiple beams based on the specific pattern requirements. The beam selection unit dynamically chooses appropriate beams from the plurality of beams generated, allowing the system to adapt to varying line widths and pitches while maintaining high-speed parallel processing capability
Solution Approach 2:
The patent segments the single beam control into multiple independent beam channels, where each beam can be individually selected and controlled. This segmentation allows different beams to handle different pattern sections with varying line widths and pitches simultaneously, resolving the contradiction between processing speed and pattern versatility
2Adaptability or versatility
If a single charged particle beam is used, then pattern versatility is improved, but processing speed deteriorates
Solution Approach 1:
The patent merges multiple charged particle beams into a unified exposure system with a single beam selection unit. This combination allows the system to leverage the versatility of individual beam control while achieving parallel processing speed through multiple simultaneous beams, effectively resolving the speed-versus-versatility contradiction
3Productivity
If multiple charged particle beams are used, then processing speed is improved, but beam selection complexity increases
Solution Approach 1:
The patent designs the beam selection unit as a universal control mechanism that can handle multiple beam types and pattern configurations through a single integrated system. This multi-functional design reduces overall system complexity by consolidating beam selection, scanning control, and irradiation control into unified control logic rather than requiring separate control systems for each beam
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the precise formation of line patterns with varying line widths and pitches, overcoming the limitations of conventional techniques and enhancing the capability to create complex semiconductor device patterns.
Implementation Method 1
an exposure apparatus that radiates a charged particle beam at a position corresponding to a line pattern on a sample
Data Source
AI summary
To form a complex and fine pattern by combining optical exposure technology and charged particle beam exposure technology, provided is an exposure apparatus that radiates a charged particle beam at a position corresponding to a line pattern on a sample, including a beam generating section that generates a plurality of the charged particle beams at different irradiation positions in a width direction of the line pattern; a scanning control section that performs scanning with the irradiation positions of the charged particle beams along a longitudinal direction of the line pattern; a selecting section that selects at least one charged particle beam to irradiate the sample from among the plurality of charged particle beams, at a designated irradiation position in the longitudinal direction of the line pattern; and an irradiation control section that controls the at least one selected charged particle beam to irradiate the sample.