Multi-beam Semiconductor Laser Device with Support Electrodes
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Solution Overview
Problem
The challenge is to reduce the beam pitch of multi-beam semiconductor laser elements while maintaining stable polarization characteristics and preventing mechanical damage to the light emitting ridge portions, which are prone to damage during handling due to their simple structure and high sensitivity.
Innovation Solution
The semiconductor laser element incorporates support electrode portions and short ridge portions with increased heights at the facets, which are electrically connected to the light emitting ridge portions, and may include isolation trenches between neighboring units to reduce beam pitch without compromising conductivity or heat dissipation, and to enhance structural stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the beam pitch is reduced to achieve higher definition and resolution, then the manufacturing precision and device complexity improve, but the light emitting ridge portions become more susceptible to mechanical damage due to their simple structure
Solution Approach 1:
The patent divides the ridge structure into multiple segments: light emitting ridge portions (for laser emission) and short ridge portions (for mechanical protection). This segmentation allows the light emitting portions to maintain simple structures for small beam pitch while the short ridge portions provide mechanical strength at the facets, resolving the contradiction between reduced beam pitch and damage resistance.
Solution Approach 2:
The short ridge portions act as intermediary protective structures between the external environment and the light emitting ridge portions. These short ridges serve as a buffer that absorbs mechanical stress and prevents direct contact with the fragile light emitting portions, thereby protecting them during handling while allowing the beam pitch to be reduced.
2Strength
If support electrode portions and short ridge portions with increased heights are added to protect light emitting ridge portions, then the mechanical strength improves, but the device complexity increases
Solution Approach 1:
The patent merges multiple functions into the short ridge portions: they provide mechanical protection, serve as structural support, and facilitate electrical connection through integrated electrode structures. This merging reduces the need for separate protective components, thereby limiting the increase in device complexity while achieving mechanical strength.
Solution Approach 2:
The short ridge portions are designed to perform multiple functions simultaneously: mechanical protection of light emitting portions, structural support for the facet region, and electrical conduction through integrated electrodes. This multi-functionality allows a single structure to address multiple requirements without proportionally increasing device complexity.
3Manufacturing precision
If isolation trenches are introduced between neighboring units to reduce beam pitch, then the manufacturing precision improves, but the heat dissipation capability may be affected
Solution Approach 1:
The patent applies local quality by making the isolation trenches shallow rather than deep, and by providing selective electrical connections through support electrode portions. This local modification approach allows beam pitch reduction with uniformity while maintaining adequate heat dissipation pathways through the substrate, avoiding the need for deep trenches that would compromise thermal management.
Data Source
AI summary
Provided is a multi-beam semiconductor laser device in which deterioration of element characteristics is suppressed even when a beam pitch is reduced. The multi-beam semiconductor laser device includes: a first semiconductor multilayer in which a plurality of semiconductor layers are laminated; a plurality of light emitting ridge portions that are formed on the first semiconductor multilayer; a support electrode portion formed in a region between a pair of neighboring light emitting ridge portions; and a front ridge portion formed on the front side of the support electrode portion. The support electrode portion is electrically connected to one of the pair of neighboring light emitting ridge portions. The support electrode portion is higher than the one light emitting ridge portion. An end of the front ridge portion on the front end surface side is higher than the one light emitting ridge portion at the front end surface.