Multi-beam Writing Apparatus Defective Beam Correction
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Solution Overview
Problem
In multi-beam writing techniques for semiconductor manufacturing, defective beams can cause excessive dose irradiation, leading to pattern shape errors and decreased efficiency due to difficulties in controlling irradiation time, and the exchange of data between blocks for correction processing hampers parallel processing efficiency.
Innovation Solution
A multiple charged particle beam writing apparatus and method that includes dose data generation circuits, margined block region generation, detection, specification, affiliation determination, and correction circuits to identify and correct defective beams within defined block regions without data exchange between blocks, using margined block regions to calculate and apply correction doses for abnormality correction.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If defective beam correction processing is performed by dividing data processing region into blocks and executing parallel processing, then processing speed is improved, but efficiency decreases when data exchange between blocks is required
Solution Approach 1:
The writing region is divided into multiple block regions for parallel processing, with each block independently identifying and correcting defective beams within its boundaries. This segmentation eliminates the need for data exchange between blocks while maintaining parallel processing efficiency.
Solution Approach 2:
Each block region performs localized defective beam correction using only the dose data within that block, applying correction processing independently without requiring information from other blocks. This local quality approach ensures parallel processing efficiency is maintained.
2Productivity
If multiple beams are used for writing, then writing throughput is increased, but pattern shape errors occur when defective beams irradiate with excessive dose
Solution Approach 1:
The system performs preliminary detection of defective beams and calculates correction doses before actual writing. By identifying beams that will deliver excessive dose and pre-calculating compensation values, the system maintains pattern accuracy while preserving the high throughput benefits of multi-beam writing.
Solution Approach 2:
The system implements feedback control by detecting actual beam doses, comparing them against target doses, and adjusting peripheral beam doses accordingly. This closed-loop feedback ensures that even when some beams malfunction, the overall pattern accuracy is maintained through real-time dose compensation.
Data Source
AI summary
A multiple charged particle beam writing apparatus includes a margined block region generation circuit to generate plural margined block regions each formed by adding a margin region to the periphery of each block region of plural block regions obtained by dividing the writing region of the target object, a detection circuit to detect a defective beam in multiple charged particle beams, a specifying circuit to specify, for each defective beam detected, a position irradiated with the defective beam, and an affiliation determination circuit to determine a margined block region, in the plural margined block regions, to which the position irradiated with the defective beam belongs, based on conditions set according to a sub-block region, in plural sub-block regions acquired by dividing the margined block region, in which the position irradiated with the defective beam in the multiple charged particle beams is located.