Multi-Bonded Pin ESD Clamp via Segmented Transistors
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Solution Overview
Problem
Integrated circuits with multi-bonded pins are vulnerable to overvoltage situations such as electrostatic discharge (ESD), which can damage the circuit due to the influence of voltage on multiple bonding wires, and existing solutions fail to effectively clamp voltage across all bond pads simultaneously.
Innovation Solution
A multi-bonded pin clamp is implemented, comprising clamp transistors that are triggered to turn on and limit voltage across multiple bond pads when an ESD event occurs, preventing damage by maintaining voltage within a safe limit, with each clamp transistor configured to handle the voltage on its respective input line.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a single clamp transistor is used to protect multi-bonded pins, then the device complexity is reduced, but the voltage clamping effectiveness across all bond pads deteriorates
Solution Approach 1:
The clamp transistor is segmented into multiple independent clamp transistors, with each transistor dedicated to clamping voltage on a specific bond pad. This segmentation ensures that each bond pad receives effective voltage protection while maintaining overall system reliability, resolving the contradiction between device complexity and clamping effectiveness.
2Reliability
If multiple clamp transistors are used for each bond pad, then the voltage clamping effectiveness is improved, but the device complexity increases
Solution Approach 1:
The protection structure is segmented into multiple independent clamp transistors, each assigned to a specific bond pad. This one-to-one mapping ensures optimal voltage clamping effectiveness for each bond pad while avoiding the unnecessary complexity of over-protection or shared clamping mechanisms.
3Object-affected harmful factors
If clamp transistors are added to protect all bond pads, then the protection capability against ESD is improved, but the power loss during normal operation increases
Solution Approach 1:
The clamp transistors are designed with dynamic switching characteristics, remaining in high-impedance state during normal operation to minimize power loss, and rapidly transitioning to low-impedance state when ESD events are detected. This dynamic behavior provides robust ESD protection while maintaining low power consumption during normal circuit operation.
Solution Approach 2:
The clamp transistors utilize parameter changes in their operating state, maintaining high off-state impedance to reduce leakage current and power loss during normal operation, while switching to low on-state impedance during ESD events to provide effective voltage clamping. This parameter modulation resolves the contradiction between protection capability and power loss.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The multi-bonded pin clamp effectively protects integrated circuits from ESD by ensuring that voltage levels across all bond pads are kept within a safe limit, reducing the risk of damage and power loss during normal operation and ESD events.
Implementation Method 1
Integrated circuits with multi-bonded pins are vulnerable to overvoltage situations such as electrostatic discharge (ESD)
Implementation Method 2
clamp transistors that are triggered to turn on and limit voltage across multiple bond pads
Data Source
AI summary
A circuit comprises a plurality of segments and a clamp circuit. Each of the plurality of segments comprises a bond pad coupled to a multi-bonded pin via a respective bond wire and a conductor coupling the bond pad to a respective internal connection. The bond pad from each of the plurality of segments is coupled to the same multi-bonded pin. The clamp circuit comprises a plurality of input pins and a plurality of clamp transistors. Each input pin is coupled to the bond pad of a respective one of the plurality of segments via the respective conductor. Each clamp transistor is coupled to a respective one of the input pins, wherein each of the plurality of clamp transistors is configured to prevent a voltage on the respective conductor from exceeding a respective voltage limit.