Multi-Bridge Semiconductor Structure With Post-Growth Inner Spacers
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Solution Overview
Problem
The growth of sources/drains on inner spacers in semiconductor devices with multi-bridge channels faces challenges due to stacking defects and stress application, leading to performance decline.
Innovation Solution
The formation of first and second inner spacers after epitaxial patterns are grown as sources/drains prevents issues caused by stacking defects, enhancing semiconductor device performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If inner spacers are formed before epitaxial growth, then source/drain structures can be defined, but stacking defects and stress application issues occur leading to performance decline
Solution Approach 1:
The patent applies preliminary action by forming the inner spacers first to define the source/drain regions, then performing epitaxial growth to form the actual source/drain structures. This sequence allows precise spatial definition while avoiding the stacking defects that would occur if spacers were formed after growth. The inner spacers serve as preliminary structures that guide subsequent material deposition without interfering with final device performance.
2Manufacturing precision
If multiple bridge patterns with different widths are formed, then channel control is improved, but inner spacer thickness variation increases
Solution Approach 1:
The patent applies local quality by forming inner spacers with different thicknesses corresponding to different bridge pattern widths. The first inner spacers have a first thickness for the first bridge pattern, while the second inner spacers have a second thickness for the second bridge pattern. This localized adaptation allows each spacer to match its corresponding bridge structure, enabling precise channel control while maintaining composition stability within each local region.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the performance of semiconductor devices by preventing defects and controlling stress, thereby mitigating leakage current and parasitic capacitance.
Implementation Method 1
first epitaxial patterns connected to the first bridge pattern, on side surfaces of the first gate structure
Data Source
AI summary
The present disclosure relates to semiconductor devices. An example semiconductor device includes a substrate including first and second regions, a first bridge pattern extending in a first direction on the first region, a first gate structure extending in a second direction intersecting the first direction, first epitaxial patterns connected to the first bridge pattern on side surfaces of the first gate structure, first inner spacers interposed between the substrate and the first bridge pattern and between the first gate structure and the first epitaxial patterns, a second bridge pattern extending in the first direction on the second region, a second gate structure extending in the second direction, second epitaxial patterns connected to the second bridge pattern on side surfaces of the second gate structure, and second inner spacers interposed between the substrate and the second bridge pattern and between the second gate structure and the second epitaxial patterns.