Multi-Cell Plasma Source for Wide-Pressure Uniform Processing
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Solution Overview
Problem
Conventional plasma sources in semiconductor processing are limited by operational regimes, often incapable of producing desirable uniformity and are constrained to specific pressure ranges, which hinders advanced semiconductor processing needs.
Innovation Solution
A plasma source design featuring multiple independently operated plasma cells with controlled electrode distances and reduced voltage, allowing operation from below 1 Torr up to 50 Torr, and enabling in situ adjustment of plasma generation through individual cells.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If conventional plasma sources are used, then plasma generation is achieved, but operational pressure range is limited and uniformity is insufficient
Solution Approach 1:
The plasma source is divided into multiple independently operable plasma cells arranged in an array. Each cell can be controlled separately, allowing different pressure conditions to be optimized in different regions while maintaining overall uniformity across the substrate processing area.
Solution Approach 2:
The system employs dynamic control of individual plasma cells, enabling real-time adjustment of plasma generation in each cell. This allows the pressure operating range to be extended while maintaining uniformity through adaptive control of plasma discharge in response to varying process conditions.
2Manufacturing precision
If conventional plasma sources with fixed design are used, then simple structure is maintained, but ability to produce desirable uniformity is limited
Solution Approach 1:
The plasma source structure is segmented into multiple identical plasma cells, each with standardized electrodes and apertures. This modular approach improves uniformity through consistent plasma generation in each cell while keeping individual cell structures simple and manufacturable.
Solution Approach 2:
The system achieves improved uniformity by independently controlling plasma generation parameters in each cell, such as applied voltage and gas flow. This allows optimization of plasma characteristics without fundamentally changing the basic structural design of each cell.
3Quantity of substance
If higher power is used to improve plasma generation, then plasma density increases, but operational regime becomes more limited
Solution Approach 1:
Total plasma power is distributed across multiple independent plasma cells, allowing the system to achieve high overall plasma density while maintaining flexibility. Each cell can operate at optimized power levels for different pressure regimes, enabling broader operational versatility.
Solution Approach 2:
The system dynamically adjusts power distribution to individual plasma cells based on operating conditions. This allows plasma density to be optimized for each cell's specific pressure and gas flow conditions, maintaining high plasma generation across a versatile operational regime.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design extends the pressure operating window, improves uniformity, and allows for precise control of plasma generation, enhancing semiconductor processing outcomes.
Implementation Method 1
The first power supply and the second power supply may be configured to produce an electrical discharge within a plasma cell positioned at an overlapping electrode
Data Source
AI summary
The present technology encompasses plasma sources including a first plate defining a first plurality of apertures arranged in a first set of rows. The first plate may include a first set of electrodes extending along a separate row of the first set of rows. The plasma sources may include a second plate defining a second plurality of apertures arranged in a second set of rows. The second plate may include a second set of electrodes extending along a separate row of the second set of rows. Each aperture of the second plurality of apertures may be axially aligned with an aperture of the first plurality of apertures. The plasma sources may include a third plate positioned between the first plate and the second plate. The third plate may define a third plurality of apertures.