Multi-Chamber ALD for Uniform SiC Epitaxial Growth
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Solution Overview
Problem
Current ALD technologies face challenges in producing high-quality epitaxial layers due to defects caused by contacting reacting gases at high temperatures, which limits the precision and quality of the deposition process, especially for epitaxial layers requiring precise control.
Innovation Solution
An ALD apparatus with a reacting chamber equipped with independently controlled heaters and a gas introducing system that introduces gases both horizontally and vertically, allowing for precise temperature control and uniform airflow, enabling the formation of high-quality epitaxial layers by varying the number of heaters based on the compound being deposited.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If substrate is contacted with two reacting gases at high temperature through rotating, then deposition speed is improved, but defects are generated and quality deteriorates
Solution Approach 1:
The patent divides the deposition process into two separate chambers: a reacting chamber for atomic layer deposition and an annealing chamber for crystal formation. This segmentation allows each chamber to be optimized for its specific function, preventing defects while maintaining high deposition speed and quality.
Solution Approach 2:
The patent introduces an annealing chamber as an intermediary step between deposition and final crystal formation. This intermediate annealing process repairs defects and improves crystal quality without sacrificing the deposition speed achieved in the reacting chamber.
2Device complexity
If single chamber ALD is used, then device complexity is reduced, but manufacturing precision deteriorates
Solution Approach 1:
The system is divided into functionally independent reacting chamber and annealing chamber, allowing precise control of deposition and crystal formation processes separately, thereby achieving high manufacturing precision.
Solution Approach 2:
Each chamber is equipped with independent temperature control and gas introduction systems optimized for its specific function, enabling precise local control of deposition and annealing conditions to achieve high epitaxial layer quality.
3Device complexity
If uniform temperature is applied, then device complexity is reduced, but manufacturing precision deteriorates
Solution Approach 1:
Multiple independent heating elements are distributed throughout the reacting chamber, allowing localized temperature control across different substrate positions. This enables precise control of deposition uniformity while maintaining manageable system complexity.
Solution Approach 2:
The temperature control system dynamically adjusts heating element activation based on real-time process requirements, enabling precise temperature distribution control during deposition to achieve uniform epitaxial layer thickness.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the quality and thickness uniformity of epitaxial layers by optimizing temperature control and airflow, thereby improving the yield and precision of the deposition process.
Implementation Method 1
a plurality of heaters controlled independently are positioned, the heaters being positioned at a bottom of the reacting chamber, and the heaters being used to bear and heat a substrate to be deposited a film
Implementation Method 2
ALD (Atomic layer deposition) is a method of forming deposition film through alternately introducing gaseous precursor pulses into a reactor to generate chemical adhesion and reaction on a base
Implementation Method 3
a transmitting device, positioned between the heaters to be used to transmit the substrate between the heaters
Data Source
AI summary
The present invention relates to an ALD (Atomic layer deposition) apparatus and an ALD method. The ALD apparatus is provided with a reacting chamber and an annealing chamber, in which the reacting chamber is positioned with several heaters, a substrate to be deposited with an epitaxial layer may be transferred between different heaters, and each heater may independently moderate temperature. Different heaters correspond to different ALDs, and the number of the heaters may be varied to meet required a film to be deposited or composition of a crystal material. Because the heaters may be optimized to adapt to required temperature of different reactant gases, thickness of the epitaxial layer will meet expectation, and quality of the epitaxial layer will be promoted. Meanwhile, moderating the temperature independently may raise yield of production. Further, the ALD apparatus of the present invention introduces gas both horizontally and vertically to form a more even airflow field which benefits in forming a high-quality epitaxial layer.