Multi-Chamber Semiconductor Deposition to Minimize Cleaning Downtime
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Solution Overview
Problem
Existing semiconductor processing methods require reactor cleaning due to collateral deposition on interior surfaces, which interrupts substrate processing and limits throughput.
Innovation Solution
A method involving a semiconductor processing system with multiple chambers allows for sequential deposition of layer pairs in separate chambers, using electromagnetic radiation to control temperature and precursors like silane and germane to form silicon germanium and silicon layers on substrates, with intermediate cleaning of chambers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If material layers are deposited onto substrates by depositing layer pairs onto substrates in a single reactor, then the deposition process can be completed, but collateral deposition accumulates on interior surfaces requiring periodic cleaning that interrupts substrate processing
Solution Approach 1:
The patent divides the deposition system into multiple separate reactors (first reactor, second reactor, third reactor) that can operate independently. Each reactor handles specific deposition tasks, allowing one reactor to be cleaned while others continue processing substrates. This segmentation eliminates the need to stop the entire production line for cleaning operations.
Solution Approach 2:
The patent introduces intermediate transfer chambers that serve as mediators between deposition reactors. These transfer chambers allow substrates to be moved between reactors without direct exposure of the reactors to each other's environmental conditions. This intermediary system enables continuous operation by allowing cleaning in one reactor while maintaining operational status in others.
2Reliability
If the reactor is cleaned periodically to remove collateral deposition, then the interior surfaces are cleaned, but substrate processing is interrupted and throughput is limited
Solution Approach 1:
The patent segments the deposition system into multiple independent reactors, each capable of being cleaned separately without affecting the others. This allows maintenance of high reliability (cleanliness) in the active reactor while another reactor undergoes cleaning, thus maintaining continuous production throughput.
Solution Approach 2:
The patent ensures continuous substrate processing by having multiple reactors operating in parallel. While one reactor is being cleaned, substrates continue to be processed in other reactors. The transfer chambers enable seamless transition of substrates between reactors, maintaining uninterrupted production flow.
3Manufacturing precision
If multiple layer pairs are deposited sequentially, then complex semiconductor structures are formed, but processing time increases
Solution Approach 1:
The patent assigns different deposition tasks to specialized reactors. For example, one reactor may be optimized for depositing specific material layers while another handles different layers. This segmentation allows parallel processing of different layer pairs, reducing total processing time while maintaining the precision required for complex semiconductor structures.
Solution Approach 2:
The patent combines multiple deposition functions into an integrated multi-reactor system with coordinated transfer chambers. This merging allows sequential deposition of multiple layer pairs to occur with minimal transition time, as the system is optimized for rapid substrate transfer and continuous deposition operations across multiple reactors.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances throughput by minimizing reactor downtime for cleaning and improving the efficiency of semiconductor structure formation.
Implementation Method 1
controlling temperature of the material layer during deposition of the material layer using electromagnetic radiation emitted by the material layer during deposition and received at a pyrometer supported above the first chamber
Implementation Method 2
depositing a first layer pair overlaying the substrate while the substrate is seated in the first chamber
Data Source
AI summary
A method of forming a semiconductor structure is provided. The method includes seating a substrate in a first chamber of a semiconductor processing system, depositing a first layer pair overlaying the substrate while the substrate is seated in the first chamber of the semiconductor processing system, and removing the substrate from the first chamber. The substrate is transferred to a second chamber coupled to the first chamber of the semiconductor processing system, seated in the second chamber of the semiconductor processing system, and a second layer pair deposited on the substrate while the substrate is seated in the second chamber such that the second layer pair overlays the first layer pair. Semiconductor structures and semiconductor processing systems are also described.