Multi-Chamber MOCVD Epitaxy for Continuous III-V and II-VI Growth
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Solution Overview
Problem
The existing semiconductor manufacturing process for blue LED chips is inefficient due to stepwise preparation of group III-V and group II-VI compound epi-wafers, requiring multiple MOCVD machines, leading to increased costs, reduced production efficiency, and environmental impact.
Innovation Solution
A combined epitaxial growth system with multiple reaction chambers, where group III-V and group II-VI compound epi-wafers are grown sequentially in the same MOCVD machine, utilizing time division multiplexing to ensure continuous production and maximum utilization of the MOCVD machine, thereby synchronizing the growth times of both types of epi-wafers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If stepwise preparation process is used with separate MOCVD machines for group III-V and group II-VI compounds, then manufacturing precision and material quality are maintained, but productivity is reduced and device complexity increases
Solution Approach 1:
The patent combines separate MOCVD machines for group III-V and group II-VI compounds into a single integrated reaction chamber. The chamber is configured with multiple reaction zones that can sequentially accommodate different substrate types, eliminating the need for manual transfer between machines and enabling continuous production while maintaining material quality through controlled atmospheric transitions.
Solution Approach 2:
The reaction chamber is designed as a universal platform that can process both group III-V and group II-VI compound semiconductors. By implementing time-division multiplexing and atmospheric control mechanisms, the single chamber performs multiple functions that previously required separate dedicated machines, thereby improving productivity without compromising manufacturing precision.
2Manufacturing precision
If multiple separate MOCVD machines are used for different compound preparations, then manufacturing precision is maintained, but device complexity and cost increase
Solution Approach 1:
The patent merges multiple separate MOCVD machines into a single integrated reaction chamber system. The chamber is equipped with automated substrate handling and atmospheric control mechanisms that enable sequential processing of different compound types, reducing the number of machines from multiple separate units to one multifunctional device while maintaining manufacturing precision.
Solution Approach 2:
The reaction chamber is designed as a universal processing platform capable of handling both group III-V and group II-VI substrates. Through time-division multiplexing and controlled atmospheric transitions, the single chamber replaces multiple dedicated machines, thereby reducing device complexity and cost while preserving material quality through precise process control.
3Adaptability or versatility
If manual transfer of substrates between machines is performed, then flexibility is maintained, but loss of time increases and productivity decreases
Solution Approach 1:
The patent combines multiple reaction chambers into a single integrated system with automated substrate handling. The chamber is configured to sequentially accommodate different substrate types without requiring manual removal and reinstallation, eliminating transfer time while maintaining process flexibility through automated programmatic control of different growth sequences.
Solution Approach 2:
The integrated reaction chamber enables continuous epitaxial growth operations by eliminating manual transfer interruptions. Substrates remain in the chamber throughout the entire multi-step process, with automated atmospheric transitions and parameter adjustments maintaining continuous useful action, thereby reducing loss of time while preserving adaptability through programmable process sequences.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces the overall production time, decreases the number of MOCVD machines needed, and enhances the efficiency and environmental sustainability of the semiconductor manufacturing process, allowing for seamless and continuous production of high-quality LED chips.
Implementation Method 1
Metal-organic chemical vapor deposition (MOCVD) is considered as a key to preparation of compound semiconductor films. It is implemented by taking volatile organic matters like (C2H5)2Zn as source reactants of involatile metal atoms, carrying the organic matters to a reactor through a carrier gas to react with O2 and H2O, and growing group II-VI compound epi-wafers (such as transparent ZnO electrode thin films) on heated substrates
Data Source
AI summary
The present disclosure provides a combined epitaxial growth system having multiple reaction chambers, an operation method, a device, and a manufactured chip and an application thereof. With a special metal-organic chemical vapor deposition (MOCVD) machine, a group III-V compound epi-wafer and a group II-VI compound epi-wafer are sequentially grown on a substrate. A time interval a at which multiple group III-V compound reaction chambers are sequentially started is the same as growth time y of the group II-VI compound epi-wafer. With the multi-chamber and stepwise manner, not only are a group III-V compound and a group II-VI compound deposited in the reaction chambers more effectively, but the time division multiplexing (TDM), effective integration of the stepwise process, and capacity matching are also implemented. The present disclosure further provides a combined epitaxial growth device having multiple reaction chambers, including a first growth device, a feeding device and a second growth device.