Multi-Chamber Pressure Barrier for High-Temperature Wafer Processing

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Solution Overview

Problem

High-pressure semiconductor wafer processing poses a risk of gas ignition and contamination due to leaks, especially at elevated temperatures, as the gas may reach its spontaneous ignition temperature.

Innovation Solution

A high-pressure processing apparatus with a multi-chamber design, including a first chamber for processing, a second chamber for heating, and a third chamber for blocking external air, utilizing a supply module to manage process, protection, and defense gases at specific pressures to prevent ignition, and a control module to regulate gas flow and leakage detection.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If high pressure and high temperature processing is performed on semiconductor wafers, then processing efficiency and quality are improved, but the risk of gas ignition due to leaks increases

Engineering Contradiction:
Improveprocessing efficiencyVSAvoidgas ignition risk
Core Design Contradiction:
ProductivityVSObject-affected harmful factors

Solution Approach 1:

The processing system is divided into multiple independent chambers (first chamber for processing, second chamber for heating, third chamber for gas containment) with separate pressure control. This segmentation isolates the high-pressure process gas from potential leak paths to the external environment, allowing high-temperature processing while preventing gas ignition outside the processing chamber.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

A third chamber is introduced as an intermediary barrier between the high-pressure processing chamber and the external environment. This intermediate chamber maintains a pressure gradient (higher than external pressure) that prevents process gas from escaping to the external environment, thereby eliminating the ignition hazard while preserving processing efficiency.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Manufacturing precision

If process gas is supplied at high pressure for efficient processing, then processing quality is improved, but the risk of gas leakage and ignition increases

Engineering Contradiction:
Improveprocessing qualityVSAvoidgas leak prevention
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The system segments the high-pressure gas containment into a dedicated first processing chamber isolated from heating and gas supply components. This separation ensures that high-pressure process gas remains confined to the processing zone, maintaining manufacturing precision while reducing leak risks through dedicated sealing interfaces.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The third chamber is pre-configured with pressure control to maintain a pressure gradient that acts as a protective barrier before any potential gas leak can reach the external environment. This preemptive pressure cushioning prevents ignition scenarios by ensuring process gas cannot escape the containment system.

Inventive Principle:
Principle #11Beforehand cushioning (Prior cushioning)

3Manufacturing precision

If temperature is increased to improve processing, then processing quality is improved, but the spontaneous ignition temperature of leaked gas is more easily reached

Engineering Contradiction:
Improveprocessing qualityVSAvoidignition temperature risk
Core Design Contradiction:
Manufacturing precisionVSTemperature

Solution Approach 1:

The heating function is segregated into a separate second chamber that surrounds but is isolated from the first processing chamber. This allows the processing chamber to be heated to high temperatures for quality processing while the heating elements and high-temperature zones are physically separated from potential gas leak paths, preventing ignition even at elevated temperatures.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The third chamber serves as a thermal and pressure intermediary barrier between the heated processing chamber and the external environment. This intermediate layer allows high-temperature processing to occur while preventing heat and potential igniting gases from reaching external flammable or oxidizing environments.

Inventive Principle:
Principle #24Intermediary (Mediator)

4Reliability

If a multi-chamber design with pressure control is implemented, then gas ignition is prevented, but device complexity increases

Engineering Contradiction:
Improveignition preventionVSAvoidchamber structure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The second chamber combines multiple functions: it serves as a heating chamber, a structural support for the first chamber, and part of the pressure containment system. By merging heating and containment functions into a single chamber, the overall device complexity is reduced compared to having completely separate components for each function.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The third chamber is designed with multi-functionality: it acts as a pressure barrier, a gas containment layer, and an interface between the processing system and external environment. This universal design allows a single chamber structure to fulfill multiple safety and operational requirements, reducing the need for additional specialized components.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The apparatus effectively prevents gas ignition and contamination by maintaining controlled gas pressures and flows, ensuring safe operation even at high temperatures, thereby reducing the risk of gas leaks and ignition during processing.

Implementation Method 1

supplying a process gas for processing the object in the first chamber at a first pressure

Methodology Applied
Scientific EffectPressure control: Pressure Increase

Implementation Method 2

a second chamber surrounding the first chamber and heating the first chamber

Methodology Applied
Scientific EffectThermal heating: Heating

Implementation Method 3

supplying a protection gas to a space between the second chamber and the first chamber at a second pressure set in relation to the first pressure

Methodology Applied
Scientific EffectPressure gradient barrier: Pressure Gradient

Implementation Method 4

supplying a defense gas to a space between each of the 3-1-th chamber and the 3-2-th chamber and the second chamber at a third pressure lower than the first pressure and the second pressure and higher than an external pressure of the third chamber to block external air from being introduced into the third chamber

Methodology Applied
Scientific EffectPressure differential barrier: Pressure Gradient

Data Source

PatentUS20240096662A1High pressure processing apparatus
Publication Date: 2024.03.21 HPSP CO LTD
  • US20240096662A1 patent drawing
  • US20240096662A1 patent drawing
  • US20240096662A1 patent drawing

AI summary

Provided is a high pressure processing apparatus including: a first chamber accommodating an object to be processed; a second chamber surrounding the first chamber and heating the first chamber; a third chamber including a 3-1-th chamber surrounding a portion of the second chamber and a 3-2-th chamber surrounding another portion of the second chamber; and a supply module supplying a process gas for processing the object in the first chamber at a first pressure, supplying a protection gas to a space between the second chamber and the first chamber at a second pressure set in relation to the first pressure, and supplying a defense gas to a space between each of the 3-1-th chamber and the 3-2-th chamber and the second chamber at a third pressure lower than the first pressure and the second pressure and higher than an external pressure of the third chamber to block external air from being introduced into the third chamber.