Multi-Channel Active Pattern Protrusion for Source/Drain Volume
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Solution Overview
Problem
Current semiconductor devices face challenges in scaling and improving element characteristics, particularly in increasing the volume of source/drain regions to enhance current control and reduce short channel effects in multi-gate transistors.
Innovation Solution
The semiconductor device design involves a multi-channel active pattern with portions protruding further upward than the field insulating layer, allowing for increased source/drain region volume, with gate electrodes and spacers strategically positioned to improve contact and reduce contact resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the source/drain region volume is increased to improve current control and reduce short channel effects, then element characteristics are improved, but the device structure becomes more complex
Solution Approach 1:
The patent introduces a multi-channel active pattern with portions protruding upward from the substrate surface into the insulating layer, creating a three-dimensional structure. This vertical dimensionality increase allows the source/drain regions to contact multiple channel surfaces (top and sidewalls), effectively increasing the source/drain volume and contact area without proportionally increasing planar device footprint, thus improving element characteristics while managing structural complexity.
Solution Approach 2:
The patent embeds fin spacers within the protruding portions of the multi-channel active pattern, creating a nested structure where the fin spacers are positioned inside the recesses of the protruding portions. This nesting allows the source/drain regions to contact both the fin spacers and the channel surfaces, maximizing the contact volume and improving current control without requiring a proportional increase in overall device size.
2Reliability
If multi-channel active patterns are formed to improve current control, then element characteristics are improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent forms the multi-channel active pattern with upward-protruding portions before forming the gate electrode and source/drain regions. This preliminary structuring establishes the three-dimensional channel geometry in advance, allowing subsequent processing steps to work with a pre-defined template. The protruding portions are formed with specific heights and shapes that guide the subsequent formation of fin spacers and source/drain contacts, reducing the precision requirements for later alignment-critical steps.
Solution Approach 2:
The patent creates regions of different heights within the multi-channel active pattern, with first portions protruding higher than second portions. This local variation in geometry allows different regions to serve different functions: the higher first portions provide enhanced source/drain contact area, while the lower second portions maintain proper gate alignment. This local quality differentiation improves current control without requiring uniform high-precision formation across the entire structure.
Data Source
AI summary
A semiconductor device includes a first multi-channel active pattern defined by a field insulating layer and extending along a first direction, the first multi-channel active pattern including a first portion having a top surface protruding further in an upward direction than a top surface of the field insulating layer and a second portion on both sides of the first portion, the second portion having sidewalls with a continuous profile and a top surface protruding further in the upward direction than the top surface of the field insulating layer and protruding in the upward direction less than the top surface of the first portion, a gate electrode on the first portion of the first multi-channel active pattern and extending along a second direction different from the first direction, and a first source/drain region on the second portion of the first multi-channel active pattern and contacting the field insulating layer.