Multi-Channel HEMT Structure With Trenches for Stable Linearity

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Solution Overview

Problem

High electron mobility transistors (HEMTs) with multi-channel heterostructures face challenges in transconductance stability and linearity, leading to short stabilization periods and poor performance.

Innovation Solution

A semiconductor structure is designed with a substrate, buffer layer, channel layers, etching mask layer, barrier layers, and a specific trench structure in the etching mask layer, which enhances the concentration of two-dimensional electron gas and reduces channel on-resistance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If a multi-channel heterostructure is used in HEMT, then the transistor can operate at high frequency and exhibit greater advantages, but the transconductance stabilization period becomes short and linearity deteriorates

Engineering Contradiction:

Improveoperating frequencyVSAvoidtransconductance stability

Core Design Contradiction:

SpeedVSReliability

Solution Approach 1:

The channel layer is segmented into multiple parallel channels separated by trenches. Each channel is independently formed between adjacent strip-shaped structures, creating multiple conduction paths that operate simultaneously. This segmentation enables high-frequency operation while the distributed structure contributes to improved transconductance stability through combined channel behavior

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

Different regions of the heterostructure are designed with different properties: the etching mask layer has specific band gap characteristics, the barrier layers have graded compositions, and the channel layers have optimized thicknesses. These local variations in material composition and structure create optimal conditions for both high-frequency performance and transconductance stabilization

Inventive Principle:

Principle #3Local quality

2Speed

If a multi-channel heterostructure is used in HEMT, then high frequency operation is achieved, but linearity becomes poor

Engineering Contradiction:

Improveoperating frequencyVSAvoidlinearity

Core Design Contradiction:

SpeedVSStability of the object's composition

Solution Approach 1:

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The band gap parameters are systematically varied across different layers: the etching mask layer has a specific band gap, the barrier layers have graded compositions with varying Al content, and the channel layers have optimized thicknesses. These parameter variations create optimal conditions for both high-frequency performance and transconductance stabilization

Inventive Principle:

Principle #35Parameter changes

3Reliability

If strip-shaped trenches are formed in the channel layer, then two-dimensional electron gas concentration is enhanced and channel on-resistance is reduced, but the manufacturing process complexity increases

Engineering Contradiction:

Improvechannel performanceVSAvoidmanufacturing process complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The etching mask layer with pre-formed strip-shaped structures is created before channel layer processing. These pre-formed masks define the trench locations and guide subsequent etching operations, simplifying the overall manufacturing process by establishing the multi-channel pattern early in the fabrication sequence

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The etching mask layer serves as an intermediary structure that facilitates trench formation. The strip-shaped structures in the mask layer act as templates that guide the etching process, enabling precise trench formation without requiring complex direct patterning of the channel layer itself

Inventive Principle:

Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The proposed solution improves the stability and linearity of HEMTs by achieving a relatively stable transconductance within a larger gate-source bias voltage range, enhancing breakdown voltage, and improving dynamic characteristics.

Implementation Method 1

a strong two-Dimensional Electron Gas (2DEG) exists in the heterostructure

Methodology Applied

Scientific EffectTwo-Dimensional Electron Gas (2DEG):

Implementation Method 2

a heterostructure formed by using two materials having different energy gaps

Methodology Applied

Scientific EffectHeterostructure effect:

Implementation Method 3

improves a linearity of a high electron mobility transistor with a multi-channel heterostructure

Methodology Applied

Scientific EffectElectric Field: Electric Field

Data Source

PatentUS20250185271A1Semiconductor structure and manufacturing method therefor

Publication Date: 2025.06.05 ENKRIS SEMICON

AI summary

A semiconductor structure includes a substrate, a buffer layer, a first channel layer, an etching mask layer, a first barrier layer, a second channel layer and a second barrier layer that are stacked sequentially. The etching mask layer includes a plurality of strip-shaped structures, a strip-shaped trench is formed between two adjacent strip-shaped structures in the plurality of strip-shaped structures, an extending direction of the strip-shaped trench is a first direction, the strip-shaped trench penetrates through the etching mask layer and partially penetrates through the first channel layer, the first barrier layer is conformally disposed in the strip-shaped trench and on the etching mask layer, and the first barrier layer includes a second trench corresponding to the strip-shaped trench. The technical solutions of the present disclosure may improve a linearity of a device.