Multi-Channel Transistor Layout for Threshold Voltage Tuning
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving high reliability, performance, and integration density while maintaining low power consumption and multifunctionality, particularly in the design of field effect transistors where threshold voltage variations and channel region configurations complicate the optimization of transistor characteristics.
Innovation Solution
The semiconductor device incorporates multiple transistors with distinct channel region configurations, including fin-shaped and multi-channel portion designs, along with varying channel widths and threshold voltages, to optimize electrical characteristics and functionality, while maintaining the same conductivity type and doping concentrations across transistors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If multiple transistors with different channel widths are used, then transistor characteristics can be optimized for different functions, but device complexity increases
Solution Approach 1:
The channel region of each transistor is divided into multiple channel portions spaced apart in the vertical direction. This segmentation allows each transistor to have multiple parallel conduction paths with different widths, enabling varied transistor characteristics (such as different drive currents and threshold voltages) without requiring completely separate transistor structures. The segmentation resolves the contradiction by providing characteristic diversity through internal channel division rather than through overall device multiplication.
Solution Approach 2:
Different channel portions within the same transistor are assigned different widths to create local variations in electrical characteristics. For example, wider channel portions provide higher drive current while narrower portions contribute to threshold voltage control. This local quality differentiation allows a single transistor to exhibit multiple characteristic profiles, achieving adaptability without proportionally increasing device complexity.
2Reliability
If channel regions are divided into multiple portions, then transistor performance can be enhanced, but manufacturing precision requirements increase
Solution Approach 1:
Multiple channel portions are nested vertically within the same horizontal footprint by spacing them in the vertical direction. This nesting approach allows multiple conduction paths to be packed into a compact volume without requiring precise lateral positioning. The vertical stacking relaxes manufacturing precision requirements compared to lateral arrangement, as vertical alignment can be achieved with standard fabrication tolerances while still providing distinct electrical pathways.
3Adaptability or versatility
If transistors with different threshold voltages are integrated, then device functionality is improved, but integration density challenges arise
Solution Approach 1:
A single transistor structure with multiple channel portions can simultaneously provide multiple threshold voltage characteristics and drive current levels, making it a multi-functional element. This universal transistor can replace what would traditionally require multiple separate transistors with different designs, thereby improving device functionality while maintaining or reducing the overall area required for integration.
Data Source
AI summary
A semiconductor device includes a first transistor, a second transistor and a third transistor provided on a substrate, the first to third transistors respectively including source and drain regions spaced apart from each other, a gate structure extending in a first direction on the substrate and interposed between the source and drain regions, and a channel region connecting the source and drain regions to each other. A channel region of the second transistor and a channel region of the third transistor respectively include a plurality of channel portions, the plurality of channel portions spaced apart from each other in a second direction, perpendicular to an upper surface of the substrate, and connected to the source and drain regions, respectively. A width of a channel portion of the third transistor in the first direction is greater than a width of a channel portion of the second transistor in the first direction.