Multi-Channel TVS With Integrated Conductive Channels
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Solution Overview
Problem
Transient voltage suppressors (TVS) for mobile terminal equipment face challenges in achieving high response speed and improved electro-static discharge (ESD) performance due to limitations in capacitance and increased package costs and reliability issues caused by bonding wires when integrating multiple channels into a single die.
Innovation Solution
The design involves a semiconductor structure with a semiconductor substrate, buried layers, epitaxial regions, and conductive channels to reduce capacitance and eliminate the need for bonding wires between channel units, allowing for multiple channels to be integrated in one die with separate terminals and reduced parasitic capacitance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If multiple channels are integrated into a single die using bonding wires, then the TVS can protect multiple transmission lines, but the package cost increases and reliability decreases due to bonding wire issues
Solution Approach 1:
The patent merges multiple channel units into a single integrated die structure where all channels share common semiconductor substrate, buried layers, and epitaxial regions. This integration eliminates the need for bonding wires to connect separate channel units, thereby improving reliability while maintaining multi-channel protection capability.
2Ease of manufacture
If traditional TVS structure is used, then the device is simple to manufacture, but the response speed is slow and ESD performance is limited due to high capacitance
Solution Approach 1:
The patent applies local quality by creating distinct regions within the semiconductor substrate with different doping types and concentrations. Each channel unit has localized doped regions (first doped type and second doped type) that form optimized PN junctions, reducing parasitic capacitance locally while maintaining overall manufacturing simplicity through standardized processing steps.
3Reliability
If lower breakdown voltage TVS is used for mobile terminal equipment, then the electronic circuitry is protected at operating voltages less than 5V, but the capacitance is limited which affects ESD performance
Solution Approach 1:
The patent segments the TVS device into multiple independent channel units, each with its own doped regions and PN junctions. This segmentation allows each channel to operate at the required lower breakdown voltage for mobile terminal protection while the combined structure provides sufficient total capacitance for ESD performance through the multiplicity of channels working in parallel.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the response speed and ESD performance of TVS while decreasing package costs and improving reliability by eliminating the need for bonding wires and reducing parasitic capacitance, enabling effective protection for multiple high-speed transmission lines.
Implementation Method 1
a conductive channel extending from a surface of the second epitaxial region into the first buried layer
Implementation Method 2
a first doped region of a first doped type formed in the first epitaxial region and a second doped region of a second doped type formed in the second epitaxial region
Data Source
AI summary
A transient voltage suppressor can include: a semiconductor substrate; a first buried layer of a first type formed in and on the semiconductor substrate; a second buried layer of a second type formed in a first region of the first buried layer; a first epitaxial region of the second type formed on the second buried layer and a second epitaxial region of the first type formed on a second region of the first buried layer; a first doped region of the first type formed in the first epitaxial region and a second doped region of the second type formed in the second epitaxial region; a conductive channel extending from a surface of the second epitaxial region into the first buried layer; and a first electrode connected to the conductive channel, a second electrode connected to the first doped region, and a third electrode connected to the second doped region.