Multi-Chip Package Stacking to Minimize Warpage and CTE Mismatch
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Solution Overview
Problem
Integration of multiple semiconductor devices into a single package remains a challenge due to mismatch in thermal expansion coefficients and warpage issues during manufacturing, which affects the yield and performance of electronic devices.
Innovation Solution
The integration of semiconductor devices is achieved through hybrid bonding and fusion bonding techniques, where chips are stacked and bonded to a semiconductor wafer with through-silicon vias (TSVs) and encapsulated with an insulating material, reducing thermal expansion mismatches and enhancing heat dissipation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If multiple semiconductor devices are integrated into a single package, then device functionality and performance are improved, but thermal expansion mismatch and warpage issues occur during manufacturing
Solution Approach 1:
The patent applies parameter changes by modifying the coefficient of thermal expansion (CTE) of the substrate to match that of the semiconductor devices. This is achieved through selecting specific substrate materials or designing composite substrate structures with tailored thermal properties, thereby reducing thermal expansion mismatch and preventing warpage during temperature cycling and manufacturing processes
Solution Approach 2:
The patent employs composite material structures, particularly in the substrate design, combining materials with different thermal and mechanical properties to create a substrate that simultaneously provides structural support and thermal expansion matching. This composite approach allows optimization of both mechanical strength and thermal compatibility for integrated device packages
2Adaptability or versatility
If multiple semiconductor devices are integrated into a single package, then device functionality is improved, but manufacturing complexity increases
Solution Approach 1:
The patent applies preliminary action by pre-attaching semiconductor devices to the substrate before final package assembly. This includes forming bump structures, preparing bonding surfaces, and positioning devices in advance, which simplifies the overall manufacturing process by consolidating multiple steps into a pre-assembled unit that can be integrated as a single module
Solution Approach 2:
The patent merges multiple semiconductor devices and their interconnection structures into a single integrated package assembly. By combining multiple devices, bonding structures, and interconnects into one unified component, the patent reduces the number of separate manufacturing steps and simplifies the final integration process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach minimizes warpage and increases yield by ensuring precise alignment and bonding of chips, while also improving heat dissipation and electrical performance in integrated circuits.
Implementation Method 1
The first chip has a plurality of through semiconductor vias (TSVs) embedded therein
Implementation Method 2
The integration of semiconductor devices is achieved through hybrid bonding and fusion bonding techniques
Implementation Method 3
The integration of semiconductor devices is achieved through hybrid bonding and fusion bonding techniques
Implementation Method 4
The fourth chip is fusion bonded to at least one of the second chip and the third chip
Data Source
AI summary
A package includes a first package structure and a second package structure stacked on the first package structure. The first package structure includes a redistribution structure, an integrated circuit, an encapsulant, and conductive structures. The integrated circuit is disposed on the redistribution structure and includes a first chip, a second chip, a third chip, and a fourth chip. The first chip includes a semiconductor substrate that extends continuously throughout the first chip. The second and the third chips are disposed side by side on the first chip. The fourth chip is disposed over the first chip and includes a semiconductor substrate that extends continuously throughout the fourth chip. Sidewalls of the first chip are aligned with sidewalls of the fourth chip. The encapsulant laterally encapsulates the integrated circuit. The conductive structures penetrate through the encapsulant. The second package structure is electrically connected to the redistribution structure through the conductive structures.