Multi-Core Pulse Transformers for Fast MOSFET Gate Switching
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Solution Overview
Problem
Existing nanosecond pulsed electric field (nsPEF) devices face challenges in delivering high voltage, sub-microsecond pulses with fast output rise and fall times, requiring low MOSFET gate driver circuit inductance for therapeutic applications.
Innovation Solution
The use of parallel, multi-core pulse transformers with coaxial primary and secondary windings, arranged independently on opposite sides of a substrate, to reduce circuit inductance and enable fast switching of MOSFETs, allowing for high voltage, high current nanosecond pulses.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If conventional single-core pulse transformers are used, then the device structure is simple, but the circuit inductance is high which prevents fast MOSFET switching
Solution Approach 1:
The patent divides a single transformer core into multiple independent cores (e.g., dual-core configuration) connected in parallel. Each core has its own winding set, allowing the total inductance to be reduced while maintaining transformation functionality. This segmentation enables faster MOSFET switching by lowering the gate driver circuit inductance without requiring a complete redesign of the transformer architecture.
Solution Approach 2:
Multiple pulse transformer cores are combined in parallel configuration to achieve the desired low inductance characteristics. The parallel connection of multiple cores with individual windings allows the magnetic circuits to operate independently while electrically combining their effects, reducing total inductance and enabling fast nanosecond-scale MOSFET switching for therapeutic nsPEF delivery.
2Power
If high voltage, nanosecond pulses are delivered, then therapeutic effectiveness is improved, but arcing and electrical breakdown increase
Solution Approach 1:
The pulse transformer serves as an intermediary device that couples the high-voltage pulse generation circuit to the MOSFET switching circuit while providing electrical isolation and impedance matching. By using a multi-core transformer configuration, the device mediates between the high-power requirements and the need to minimize arcing through optimized inductance and controlled electromagnetic coupling.
3Loss of time
If low inductance is achieved through multi-core transformers, then fast pulse rise and fall times are enabled, but the device size and complexity increase
Solution Approach 1:
The patent transitions from a single-core three-dimensional structure to a multi-core planar configuration that can be integrated onto a substrate. By arranging multiple cores in a two-dimensional layout and connecting them through parallel windings, the design achieves low inductance and fast switching times while controlling the overall device footprint through spatial optimization.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables rapid on/off switching of MOSFETs, reduces arcing, and provides compact, efficient delivery of high voltage, high current nanosecond pulses for therapeutic applications, including electroporation and medical treatments.
Implementation Method 1
parallel, multi-core (e.g., two or more core) pulse transformers each comprising an independent transformer core wherein a plurality of primary and secondary windings are wrapped around each core
Data Source
AI summary
Described herein are apparatuses and methods for applying high voltage, sub-microsecond (e.g., nanosecond range) pulsed output to a biological material, e.g., tissues, cells, etc., using a high voltage (e.g., MOSFET) gate driver circuit having a high voltage isolation and a low inductance. In particular, described herein are multi-core pulse transformers comprising independent transformer cores arranged in parallel on opposite sides of a substrate. The transformer cores may have coaxial primary and secondary windings. Also describe are pulse generators including multi-core pulse transformers arranged in parallel (e.g., on opposite sides of a PCB) to reduce MOSFET driver gate inductance.