Multi-Depth Fin Transistor Short Channel Effect
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Solution Overview
Problem
The increasing demand for high-performance, high-speed semiconductor devices with fine patterns poses challenges in achieving optimal integration and reducing the short channel effect, particularly in transistors with varying current requirements.
Innovation Solution
A semiconductor device design featuring multiple transistors with active fins and gate electrodes of varying configurations, including single, dual, and triple fin structures, where the depth and width of source/drain layers and recesses are tailored to accommodate different current demands, using a substrate with a gate insulating layer and source/drain layers made of materials that induce strain in the channel region.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the degree of integration of semiconductor devices is increased to meet high performance demand, then device performance and versatility are improved, but the short channel effect worsens and manufacturing precision becomes more difficult to maintain
Solution Approach 1:
The active fin is divided into multiple segments along the channel length direction, with each segment having different depths. This segmentation allows the channel to be divided into multiple regions with different electrical characteristics, effectively reducing the short channel effect while maintaining high integration度
Solution Approach 2:
Different regions of the active fin are given different local properties through varying depths. The first region has a greater depth than the second region, creating localized electrical characteristics that optimize performance while mitigating the short channel effect in specific areas
2Adaptability or versatility
If patterns with fine widths and fine spacings are fabricated to achieve high integration, then device integration is improved, but manufacturing precision becomes more challenging
Solution Approach 1:
The design transitions from a two-dimensional planar structure to a three-dimensional multi-depth fin structure. By varying the depth dimension of active fins, the patent achieves higher integration and better electrical performance without further reducing the lateral dimensions, thus avoiding the manufacturing precision challenges associated with finer patterns
3Adaptability or versatility
If transistors with varying current requirements are designed in the same device, then device versatility is improved, but device complexity increases
Solution Approach 1:
Different regions of the active fin are given different local properties through varying depths. The first region has a greater depth than the second region, creating localized electrical characteristics that optimize performance while mitigating the short channel effect in specific areas
Solution Approach 2:
The patent varies the depth parameter of active fins along the channel length to accommodate different current requirements. By changing the geometric parameter (depth) rather than introducing entirely different transistor structures, the patent achieves versatility while controlling complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances device performance by reducing the short channel effect and improving threshold voltage variation, leading to improved semiconductor device characteristics and efficiency.
Implementation Method 1
source/drain layers made of materials that induce strain in the channel region
Data Source
AI summary
A semiconductor device includes a substrate having a first region and a second region, a first transistor including a single first active fin disposed in the first region, a first gate electrode intersecting the single first active fin, and a single first source/drain layer disposed in the first recess of the single first active fin, and a second transistor including a plurality of second active fins disposed in the second region, a second gate electrode intersecting the plurality of second active fins, and a plurality of second source/drain layers disposed in the second recesses of the plurality of second active fins. The single first active fin and the plurality of second active fins may have a first conductivity type, and a depth of the first recess may be less than a depth of each of the second recesses.