Multi-Die Semiconductor Package Layout for Creepage Insulation
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Solution Overview
Problem
Semiconductor devices with multiple elements in a single package face challenges in maintaining insulation withstand voltage due to differences in power supply voltages between conduction paths, leading to potential electrical insulation failures.
Innovation Solution
The semiconductor device incorporates a conductive support member with die pads of different potentials, semiconductor elements, and an insulating element, along with a sealing resin that covers and insulates these components, featuring specific geometrical configurations to enhance insulation and reduce electric field strength between the elements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If multiple semiconductor elements are mounted in one package with different power supply voltages, then the device can perform multiple functions (control element and drive element), but the insulation withstand voltage between conduction paths deteriorates
Solution Approach 1:
The die pad is divided into multiple isolated regions (first die pad region and second die pad region) that are separated by insulating structures. This segmentation allows different power supply voltages to be applied to different regions while maintaining electrical insulation between them, thus enabling functional integration without compromising insulation withstand voltage.
Solution Approach 2:
An insulating structure is introduced as an intermediary between the first die pad region and the second die pad region. This intermediary element provides electrical insulation while allowing both regions to coexist in the same package, enabling multiple functions to be integrated without direct electrical connection between different voltage domains.
2Manufacturing precision
If the die pad structure is simplified for manufacturing, then the manufacturing precision can be improved, but the insulation withstand voltage between die pads with different potentials deteriorates
Solution Approach 1:
The insulating structure extends in the thickness direction (z-direction) of the substrate, creating a three-dimensional insulation barrier between the first and second die pad regions. This vertical dimension provides effective insulation without requiring complex lateral arrangements, thus maintaining manufacturing simplicity while ensuring adequate insulation withstand voltage.
Solution Approach 2:
The insulating structure is formed using a composite configuration combining an insulating film and an opening structure. This composite approach provides effective insulation through material properties and structural design, achieving reliable insulation withstand voltage without overly complicating the manufacturing process.
Data Source
AI summary
A semiconductor device includes a first die pad, a second die pad, a first semiconductor element, a second semiconductor element, an insulating element, first terminals, second terminals, and a sealing resin. The sealing resin has a top surface, a bottom surface, and first to third side surfaces. The first terminals include a first edge terminal located closest to the third side surface. The second terminals include a second edge terminal located closest to the third side surface. A first creepage distance, which is a shortest distance from the first edge terminal to the second edge terminal along the first side surface, the third side surface, and the second side surface, is shorter than a second creepage distance, which is a shortest distance from the first edge terminal to the second edge terminal along the first side surface, the bottom surface, and the second side surface.