Multi-Die Integrated Inductor for Dense On-Chip Energy Storage
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Solution Overview
Problem
Conventional inductors are expensive to manufacture and occupy a large on-chip area, limiting their integration in power circuits due to material constraints and inefficiencies in charge pumps.
Innovation Solution
Integrate a solenoid inductor using memory device structures, such as NAND memory pillars, to achieve high inductance density and q-factor, replacing conventional charge pumps with a boost converter for efficient on-chip energy storage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If conventional inductors are used in power circuits, then energy storage function is achieved, but manufacturing cost increases and on-chip area is occupied
Solution Approach 1:
The patent combines the inductor structure with memory device structures (NAND memory pillars) by integrating conductive portions around the pillars. This merging allows the inductor to share the same physical space and structural elements as the memory device, thereby achieving energy storage functionality without occupying additional on-chip area.
Solution Approach 2:
The memory device structures serve dual purposes: they function as both memory storage elements and as the core structure for the inductor. The conductive portions wrapped around the pillars create magnetic fields for energy storage while the pillars themselves provide the structural framework, enabling one system to perform multiple functions simultaneously.
2Power
If conventional charge pumps are used to generate high voltages, then voltage multiplication is achieved, but device size increases and conversion efficiency deteriorates
Solution Approach 1:
The patent replaces the conventional charge pump mechanism with a boost converter that utilizes the integrated solenoid inductor. This substitution transitions from a capacitor-based voltage multiplication approach to an inductor-based approach, achieving superior conversion efficiency while maintaining compact dimensions through the shared memory structure integration.
3Reliability
If conventional inductors are manufactured, then inductance is achieved, but material constraints increase manufacturing cost
Solution Approach 1:
The inductor is manufactured by integrating conductive portions with existing memory device structures during the same fabrication process. This merging eliminates the need for separate inductor manufacturing steps and reduces material requirements, as the memory pillars themselves serve as the inductor core, thereby reducing manufacturing cost while maintaining reliable inductance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solenoid inductor provides enhanced inductance density and q-factor, enabling efficient energy storage and reducing the size of power circuits while maintaining compactness and efficiency.
Implementation Method 1
a conductive path that includes a first via extending through a first die from a first lower connection to a first interface contact at a first side of a bonding interface, and a second via extending through a second die from a second interface contact at a second side of the bonding interface to a second lower connection, wherein the first via and the second via are electrically coupled to provide multiple turns of the conductive path that forms a solenoid
Data Source
AI summary
A memory device can include an array of memory cells and an integrated inductor. The array can be provided on a first semiconductor substrate. First conductive portions of the inductor can be provided on the first semiconductor substrate, and each of the first conductive portions provides less than one revolution of a conductive path of the inductor. Second conductive portions of the inductor can be vertically separate from the first conductive portions and coupled to the first conductive portions to provide multiple revolutions of the conductive path of the inductor. The second conductive portions of the inductor can be provided on a different second semiconductor substrate. The inductor can optionally include a core region that is filled with a magnetic or non-magnetic material.