Multi-Die Interconnect Bridge for Bandwidth and Footprint
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Solution Overview
Problem
Next-generation data centers and IoT devices face challenges in meeting demands for increased bandwidth, flexibility, power efficiency, and reduced footprint due to limitations in conventional semiconductor packaging, such as chip-to-chip bandwidth limitations and power consumption issues with traditional printed circuit boards.
Innovation Solution
The use of a multi-die interconnect bridge within a semiconductor package substrate to conductively couple multiple semiconductor dies, allowing direct communication between dies without passing through intervening dies, reducing the package footprint and improving signal quality and power efficiency, while enabling the integration of dies with different architectures and technologies.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If additional components are packed on a standard printed circuit board to address varied demands, then functionality is improved, but chip-to-chip bandwidth is limited due to interconnect density
Solution Approach 1:
The patent transitions from planar PCB routing to three-dimensional vertical stacking with through-silicon vias, enabling high-speed interconnects that pass through the substrate depth dimension. This allows multiple dies to communicate at high bandwidth without increasing lateral footprint, resolving the contradiction between functionality and chip-to-chip bandwidth.
Solution Approach 2:
The patent implements a nested architecture where multiple semiconductor dies are stacked vertically within a compact package, with through-silicon vias penetrating through intermediate dies to establish direct interconnects. This nesting approach enables high functionality within a small footprint while maintaining high bandwidth through vertical routing paths.
2Adaptability or versatility
If additional components are packed on a standard printed circuit board to address varied demands, then functionality is improved, but power consumption increases due to long distance traces between chips
Solution Approach 1:
The patent replaces long lateral traces on PCBs with short vertical interconnects through the substrate. By routing signals through the depth dimension via through-silicon vias, the physical distance between functional components is dramatically reduced, lowering power consumption while maintaining enhanced functionality.
Solution Approach 2:
The nested die stacking architecture places functional components in close vertical proximity, minimizing trace lengths and reducing power loss. This compact three-dimensional arrangement enables high functionality with low power consumption by eliminating the need for long-distance signal routing.
3Adaptability or versatility
If additional components are packed on a standard printed circuit board to address varied demands, then functionality is improved, but physical size of printed circuit boards increases to accommodate the chips
Solution Approach 1:
The patent exploits the vertical dimension by stacking multiple dies and routing interconnects through the substrate depth. This three-dimensional approach packs high functionality into a small lateral footprint, as the increased functionality is achieved through vertical stacking rather than lateral expansion.
Solution Approach 2:
The nested architecture embeds multiple functional dies within a compact package volume, with through-silicon vias providing direct interconnects through the stack. This enables high functionality in a minimal footprint by nesting components vertically rather than arranging them laterally on a large PCB.
4Speed
If monolithic integration of system components is used to provide a potential solution, then bandwidth and power efficiency are improved, but integration of system components evolving at different rates is not permitted
Solution Approach 1:
The patent segments the system into separate semiconductor dies that can be independently designed, fabricated, and optimized for different technologies and process nodes. These segmented dies are then integrated through the substrate using through-silicon vias, enabling high bandwidth while accommodating components that evolve at different rates.
Solution Approach 2:
The substrate with through-silicon vias acts as an intermediary platform that connects independently optimized semiconductor dies. This mediator enables heterogeneous integration of components with different technologies and evolution rates while maintaining high bandwidth through direct vertical interconnects.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances bandwidth, power efficiency, and flexibility by minimizing the package footprint, reducing the need for through-silicon vias, and allowing for the integration of mixed architecture dies, thereby addressing the limitations of traditional packaging solutions.
Implementation Method 1
a multi-die interconnect bridge within a semiconductor package substrate to conductively couple multiple semiconductor dies
Data Source
AI summary
Systems and methods of conductively coupling at least three semiconductor dies included in a semiconductor package using a multi-die interconnect bridge that is embedded, disposed, or otherwise integrated into the semiconductor package substrate are provided. The multi-die interconnect bridge is a passive device that includes passive electronic components such as conductors, resistors, capacitors and inductors. The multi-die interconnect bridge communicably couples each of the semiconductor dies included in the at least three semiconductor dies to each of at least some of the remaining at least three semiconductor dies. The multi-die interconnect bridge occupies a first area on the surface of the semiconductor package substrate. The smallest of the at least three semiconductor dies coupled to the multi-die interconnect bridge 120 occupies a second area on the surface of the semiconductor package substrate, where the second area is greater than the first area.