Multi-die Package Thermal Management via TSVs and AI Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The performance of processors and their associated memory is limited by insufficient thermal dissipation due to thermal concentration in multi-die packages, which restricts the thermal design power envelope and operating speed.
Innovation Solution
Implementing a multi-die package with stacked CPU and memory dies connected via through silicon vias, utilizing a silicon-based connector with integrated logic and memory circuits, including AI architecture circuitry for smart power management to optimize power consumption and thermal dissipation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If multiple dies are stacked in close proximity to increase memory capacity and bandwidth, then processing performance and memory bandwidth are improved, but thermal concentration increases and thermal dissipation becomes insufficient
Solution Approach 1:
The patent transitions from a two-dimensional planar arrangement of dies to a three-dimensional stacked configuration using through-silicon vias (TSVs). This vertical stacking enables higher memory capacity and bandwidth by utilizing the third dimension, while the distributed thermal pathways in the multi-die architecture help manage heat concentration compared to a single large die.
Solution Approach 2:
The system divides the processing architecture into multiple separate dies (CPU die, memory die, I/O die) that are stacked and interconnected. This segmentation allows each die to be optimized independently and creates distributed thermal zones, preventing heat concentration in a single location while maintaining high performance through close proximity interconnections.
2Quantity of substance
If multiple dies are placed in a multi-die package to increase capacity, then memory capacity and bandwidth are improved, but the thermal design power envelope is restricted
Solution Approach 1:
The memory system is segmented into multiple separate memory dies stacked with CPU and I/O dies. Each die operates within its own thermal zone, allowing the total memory capacity to scale across multiple components while distributing the power and thermal load, thus avoiding the single-point thermal bottleneck of a monolithic design.
Solution Approach 2:
Through-silicon vias (TSVs) serve as intermediary conductive pathways that enable vertical electrical interconnections between stacked dies. These TSVs also function as thermal pathways, conducting heat away from each die to underlying thermal management structures, thereby managing power density and thermal design power envelope across the multi-die package.
3Volume of moving object
If dies are stacked vertically to reduce form factor, then package size is reduced, but thermal dissipation challenges increase
Solution Approach 1:
The patent utilizes vertical stacking in the third dimension to reduce the planar footprint of the package. By arranging CPU, memory, and I/O dies in a vertical stack connected via TSVs, the form factor is minimized while the vertical architecture provides multiple thermal pathways through the stack to heat sinks or thermal management structures, addressing thermal dissipation in the vertical dimension.
Solution Approach 2:
The through-silicon via (TSV) structure serves multiple functions simultaneously: it provides electrical interconnection between stacked dies for data and power transmission, and it acts as a thermal conduction pathway to transport heat away from each die. This multi-functionality enables compact vertical integration while managing thermal dissipation through the same structural elements.
Data Source
AI summary
Methods and apparatus to implement efficient memory storage in multi-die packages are disclosed. An example multi-die package includes a multi-die stack including a first die and a second die. The second die is stacked on the first die. The multi-die package further includes a third die adjacent the multi-die stack. The multi-die package also includes a silicon-based connector to communicatively couple the multi-die stack and the third die. The silicon-based connector includes at least one of a logic circuit or a memory circuit.