Multi-Dielectric Conduction Channel Structure for Simpler Display Fabrication

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Solution Overview

Problem

Traditional display manufacturing processes are complex and costly, with many steps required to produce displays such as micro light-emitting diode displays, mini light-emitting diode displays, and quantum dot light-emitting diode displays, necessitating a reduction in process steps to enhance efficiency and reduce costs.

Innovation Solution

A structure with multi-dielectric layers is introduced, comprising a conduction channel made of aluminum, a sidewall oxide dielectric structure, and a top oxide dielectric structure. The sidewall oxide dielectric structure has a first effective permittivity, while the top oxide dielectric structure, which includes silicon, has a second effective permittivity lower than the first, optimizing the dielectric properties for improved manufacturing efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If traditional standardized manufacturing processes are used for display production, then manufacturing reliability is maintained, but device complexity and manufacturing cost increase due to many process steps

Engineering Contradiction:
Improvemanufacturing process complexityVSAvoidmanufacturing reliability
Core Design Contradiction:
Device complexityVSReliability

Solution Approach 1:

The patent combines multiple dielectric layers (first dielectric layer with higher effective permittivity and second dielectric layer with lower effective permittivity) into a single integrated structure surrounding the conduction channel. This merging of multiple functional layers into one composite structure reduces the number of separate manufacturing steps while maintaining the reliability benefits of multi-layer dielectric design, directly addressing the contradiction between process complexity and manufacturing reliability

Inventive Principle:
Principle #5Merging (Combining)

2Productivity

If multiple dielectric layers with different permittivities are implemented, then manufacturing efficiency and display performance improve, but device complexity increases

Engineering Contradiction:
Improvemanufacturing efficiencyVSAvoidstructure complexity
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The patent applies local quality by assigning different effective permittivity values to different spatial regions of the dielectric structure. The first dielectric layer has a higher effective permittivity than the second dielectric layer, creating localized electrical properties optimized for specific functional requirements. This allows manufacturing efficiency and display performance to improve through tailored local dielectric characteristics without requiring overly complex multi-layer configurations throughout the entire structure

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The proposed structure reduces the complexity and cost of display manufacturing by optimizing dielectric properties, allowing for a more efficient manufacturing process with potentially improved display performance.

Implementation Method 1

The sidewall oxide dielectric structure has a first effective permittivity, the top oxide dielectric structure has a second effective permittivity, and the first effective permittivity is greater than the second effective permittivity

Methodology Applied
Scientific EffectDielectric permittivity: Dielectric Permittivity

Data Source

PatentUS20250194159A1Structure having multi-dielectric layers
Publication Date: 2025.06.12 MIKRO MESA TECH
  • US20250194159A1 patent drawing
  • US20250194159A1 patent drawing
  • US20250194159A1 patent drawing

AI summary

A structure having multi-dielectric layers includes a conduction channel, a sidewall oxide dielectric structure, and a top oxide dielectric structure. The conduction channel contains aluminum. The sidewall oxide dielectric structure is in contact with a side surface of the conduction channel and has a first effective permittivity. The top oxide dielectric structure is in contact with a top surface of the conduction channel and a top surface of the sidewall oxide dielectric structure and has a second effective permittivity. A material of the top oxide dielectric structure includes silicon. The first effective permittivity is greater than the second effective permittivity.