Multi-Dielectric Films for Semiconductor Devices
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Solution Overview
Problem
High-k thin films in semiconductor devices, such as hafnium oxide and zirconium oxide, face issues with leakage current due to crystallization and poor surface morphology, which limits their dielectric constant and reliability when used in multi-dielectric films.
Innovation Solution
A multi-dielectric film structure comprising a composite zirconium-hafnium-oxide film and an amorphous metal oxide film, such as Al2O3, La2O3, or LaAlO3, is developed, where the films are stacked alternately to enhance dielectric constant and reduce leakage current by preventing oxygen diffusion and maintaining a complex crystalline structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If hafnium oxide film is used for high-k thin film, then dielectric constant is improved, but leakage current increases due to crystallization at high temperature
Solution Approach 1:
The patent employs a composite structure consisting of a first dielectric film (hafnium oxide with high dielectric constant) and a second dielectric film (aluminum oxide with low dielectric constant) stacked together. This composite configuration allows the system to achieve high overall dielectric constant while the aluminum oxide layer prevents crystallization-induced leakage current in the hafnium oxide layer, thus resolving the contradiction between dielectric constant and reliability.
2Stability of the object's composition
If zirconium oxide film is used for high-k thin film, then dielectric constant is improved, but surface morphology deteriorates leading to increased leakage current
Solution Approach 1:
The patent uses a composite structure where a first dielectric film (zirconium oxide with high dielectric constant) is combined with a second dielectric film (aluminum oxide). The aluminum oxide layer compensates for the poor surface morphology of zirconium oxide by providing a smooth interface, thereby reducing leakage current while maintaining the high dielectric constant property of the zirconium oxide layer.
3Reliability
If aluminum oxide film is formed on zirconium oxide film, then leakage current is reduced, but zirconium oxide film cannot be sufficiently crystallized due to crystalline structure interference
Solution Approach 1:
The patent applies local quality by creating distinct functional zones within the composite film structure. The zirconium oxide layer is optimized for high dielectric constant with controlled crystallization, while the aluminum oxide layer is optimized for leakage current suppression. Each layer performs its specific function locally, allowing the zirconium oxide to maintain its crystalline structure for high k-value while the aluminum oxide provides the necessary barrier properties without interfering excessively with the overall crystallization process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The multi-dielectric film achieves a high dielectric constant while reducing leakage current and enhancing reliability by utilizing the amorphous metal oxide to compensate for defects in the composite film, maintaining a stable structure even at high temperatures.
Implementation Method 1
the films are stacked alternately to enhance dielectric constant and reduce leakage current by preventing oxygen diffusion
Implementation Method 2
maintaining a complex crystalline structure
Data Source
AI summary
A multi-dielectric film including at least one first dielectric film that is a composite film made of zirconium-hafnium-oxide and at least one second dielectric film that is a metal oxide film made of amorphous metal oxide. Adjacent ones of the dielectric films are made of different materials.